中国物理B ›› 2003, Vol. 12 ›› Issue (12): 1417-1422.doi: 10.1088/1009-1963/12/12/014

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Analysis of the laser performance of Tm3+, Tb3+(Ho3+):YVO4 crystals at ～1.5μm wavelength

黄莉蕾, 付晏彬, 邬良能   

  1. Optoelectronic Research Center, China Institute of Metrology, Hangzhou 310034, China
  • 收稿日期:2003-03-14 修回日期:2003-04-23 出版日期:2003-12-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the Foundation of the Natural Science of Zhejiang Province, China(Grant No 600087), and by the State Key Laboratory of LMOI-013 Zhejiang University, China.

Analysis of the laser performance of Tm3+, Tb3+(Ho3+):YVO4 crystals at ～1.5μm wavelength

Huang Li-Lei (黄莉蕾), Fu Yan-Bin (付晏彬), Wu Liang-Neng (邬良能)   

  1. Optoelectronic Research Center, China Institute of Metrology, Hangzhou 310034, China
  • Received:2003-03-14 Revised:2003-04-23 Online:2003-12-16 Published:2005-03-16
  • Supported by:
    Project supported by the Foundation of the Natural Science of Zhejiang Province, China(Grant No 600087), and by the State Key Laboratory of LMOI-013 Zhejiang University, China.

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摘要： The absorption spectra of Tb,Tm:YVO_4 and Ho,Tm:YVO_4 are measured. The radiant and non-radiant transition probabilities from higher level to lower level, A_{i,j} and ω_{i,j}, and the cross-elaxation probability are calculated in virtue of Judd－Ofelt and Dexter theories. The fluorescence lifetime of Tm^{3+} in the Tb^{3+} (or Ho^{3+}) co-doped crystal is calculated. It indicates that the lifetime of initial level {}^3H_4 of the laser transition can be shorter than that of terminal level {}^3F_4 of the transition if the atomic percentage of Tb^{3+} (or Ho^{3+}) ions is bigger than about 1 at%: namely, by means of the co-doping Tb^{3+} (or Ho^{3+}) ions the self-termination phenomenon of laser light can be eliminated. Inserting the optic parameters to the formula deduced here on the laser threshold power P^{(4)}_{th} and the slope efficiency η^{(4)}_s of the four-energy-level system, we obtain the relationship of threshold power P^{(4)}_{th} to the concentration of Tm^{3+} ions and discuss the effect of Tb^{3+} (or Ho^{3+}) ion concentration on the laser threshold power P^{(4)}_{th} around 1.5μm wavelength. The result shows that Tb,Tm:YVO_4 crystal is a better choice to make the laser at ～1.5μm wavelength than Ho,Tm:YVO_4 crystal. We give the appropriate composition of (1－2) at% Tb, (1－2) at% Tm:YVO_4, just for reference.

Abstract: The absorption spectra of Tb,Tm:YVO$_4$ and Ho,Tm:YVO$_4$ are measured. The radiant and non-radiant transition probabilities from higher level to lower level, $A_{i,j}$ and $\omega_{i,j}$, and the cross-elaxation probability are calculated in virtue of Judd－Ofelt and Dexter theories. The fluorescence lifetime of Tm$^{3+}$ in the Tb$^{3+}$ (or Ho$^{3+}$) co-doped crystal is calculated. It indicates that the lifetime of initial level $^3$H$_4$ of the laser transition can be shorter than that of terminal level $^3$F$_4$ of the transition if the atomic percentage of Tb$^{3+}$ (or Ho$^{3+}$) ions is bigger than about 1 at%: namely, by means of the co-doping Tb$^{3+}$ (or Ho$^{3+}$) ions the self-termination phenomenon of laser light can be eliminated. Inserting the optic parameters to the formula deduced here on the laser threshold power $P^{(4)}_{\rm th}$ and the slope efficiency $\eta^{(4)}_{\rm s}$ of the four-energy-level system, we obtain the relationship of threshold power $P^{(4)}_{\rm th}$ to the concentration of Tm$^{3+}$ ions and discuss the effect of Tb$^{3+}$ (or Ho$^{3+}$) ion concentration on the laser threshold power $P^{(4)}_{\rm th}$  around 1.5μm wavelength. The result shows that Tb,Tm:YVO$_4$ crystal is a better choice to make the laser at $\sim1.5$μm wavelength than Ho,Tm:YVO$_4$ crystal. We give the appropriate composition of (1－2) at% Tb, (1－2) at% Tm:YVO$_4$, just for reference.

Key words: Tb(Ho), Tm:YVO$_4$ crystal, fluorescence lifetime, lasing at around 1.5μm wavelength, self-termination phenomenon of laser

中图分类号:  (Beam characteristics: profile, intensity, and power; spatial pattern formation)

  • 42.60.Jf
42.55.Rz (Doped-insulator lasers and other solid state lasers) 42.70.Hj (Laser materials) 78.55.Hx (Other solid inorganic materials) 32.70.Cs (Oscillator strengths, lifetimes, transition moments) 32.50.+d (Fluorescence, phosphorescence (including quenching))