中国物理B ›› 1994, Vol. 3 ›› Issue (3): 200-207.doi: 10.1088/1004-423X/3/3/006

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SIMULATION OF OCCUPATION FUNCTION FOR THERMALLY STIMULATED CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS

朱美芳, 丁亦兵, 宗军, 刘红   

  1. Department of Physics, Graduate School, Academia Sinica, Beijing 100039, China
  • 收稿日期:1993-07-13 出版日期:1994-03-20 发布日期:1994-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

SIMULATION OF OCCUPATION FUNCTION FOR THERMALLY STIMULATED CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS

ZHU MEI-FANG (朱美芳), DING YI-BING (丁亦兵), ZONG JUN (宗军), LIU HONG (刘红)   

  1. Department of Physics, Graduate School, Academia Sinica, Beijing 100039, China
  • Received:1993-07-13 Online:1994-03-20 Published:1994-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： The occupation functions for the general condition f(E,T), for the high field approx-imation (HTSC) fH(E,T) and for the steady state photoconductivity (SSPC) fP(E,T) in the thermally stimulated conductivity (TSC) of amorphous semiconductors have been inves-tigated. It was found that the occupation function f(E,T) in TSC is in excellent agreement with the occupation function in SSPC fP(E,T) under the condition of σTSC(T) = σP(T).There is a large difference between fP(E,T) and fH(E,T), which can be much reduced by introducing an effective attempt to escape frequency νeff in the calculation of fH (E, T). The results show that the mobility-lifetime product (μτ) in TSC obtained from SSPC measure-ments under the above condition is valid. For high field approximation TSC, the simulated νeff is found to be temperature dependent.

Abstract: The occupation functions for the general condition f(E,T), for the high field approx-imation (HTSC) fH(E,T) and for the steady state photoconductivity (SSPC) fP(E,T) in the thermally stimulated conductivity (TSC) of amorphous semiconductors have been inves-tigated. It was found that the occupation function f(E,T) in TSC is in excellent agreement with the occupation function in SSPC fP(E,T) under the condition of $\sigma$TSC(T) = $\sigma$P(T).There is a large difference between fP(E,T) and fH(E,T), which can be much reduced by introducing an effective attempt to escape frequency νeff in the calculation of fH (E, T). The results show that the mobility-lifetime product ($\mu$$\tau$) in TSC obtained from SSPC measure-ments under the above condition is valid. For high field approximation TSC, the simulated νeff is found to be temperature dependent.

中图分类号:  (Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)

  • 66.70.-f
72.40.+w (Photoconduction and photovoltaic effects) 72.80.Ng (Disordered solids) 72.20.Fr (Low-field transport and mobility; piezoresistance)