中国物理B ›› 2026, Vol. 35 ›› Issue (5): 56106-056106.doi: 10.1088/1674-1056/ae311f

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Visible transparent β-Ga2O3 solar-blind UV high-performance photodetector for stable high-temperature operation

Chao Zhang(张超)1,†, Jinpeng Dong(董瑾鹏)1, Gang Li(李刚)1, Yida Guan(管艺达)2, Jiahao Zhang(张嘉豪)1, Qingyu Wang(王清玉)1, Zhilin Wang(王志林)1, Duo Sun(孙多)1, Yue Sun(孙悦)1, and Lili Wang(王丽丽)1,‡   

  1. 1 Key Laboratory of Advanced Structural Materials, Ministry of Education, and School of Materials Science and Engineering, Changchun University of Technology, Changchun 130012, China;
    2 College of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, China
  • 收稿日期:2025-10-28 修回日期:2025-12-11 接受日期:2025-12-25 发布日期:2026-04-29
  • 通讯作者: Chao Zhang,E-mail:zhangchao@ccut.edu.cn;Lili Wang,E-mail:wanglili@ccut.edu.cn E-mail:zhangchao@ccut.edu.cn;wanglili@ccut.edu.cn
  • 基金资助:
    Project supported by the Natural Science Foundation of Jilin Province, China (Grant No. YDZJ202501ZYTS638) and the Fund of Education Department of Jilin Province (Grant Nos. JJKH20250694KJ and JJKH20250695KJ).

Visible transparent β-Ga2O3 solar-blind UV high-performance photodetector for stable high-temperature operation

Chao Zhang(张超)1,†, Jinpeng Dong(董瑾鹏)1, Gang Li(李刚)1, Yida Guan(管艺达)2, Jiahao Zhang(张嘉豪)1, Qingyu Wang(王清玉)1, Zhilin Wang(王志林)1, Duo Sun(孙多)1, Yue Sun(孙悦)1, and Lili Wang(王丽丽)1,‡   

  1. 1 Key Laboratory of Advanced Structural Materials, Ministry of Education, and School of Materials Science and Engineering, Changchun University of Technology, Changchun 130012, China;
    2 College of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, China
  • Received:2025-10-28 Revised:2025-12-11 Accepted:2025-12-25 Published:2026-04-29
  • Contact: Chao Zhang,E-mail:zhangchao@ccut.edu.cn;Lili Wang,E-mail:wanglili@ccut.edu.cn E-mail:zhangchao@ccut.edu.cn;wanglili@ccut.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Jilin Province, China (Grant No. YDZJ202501ZYTS638) and the Fund of Education Department of Jilin Province (Grant Nos. JJKH20250694KJ and JJKH20250695KJ).

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摘要： Transparent ultraviolet (UV) photodetectors have garnered significant interest due to their promising applications in integrated transparent electronics. In this work, a visible transparent solar-blind ultraviolet photodetector with stable crystalline ITO electrodes based on a $\beta$-Ga$_{2}$O$_{3}$ film has been fabricated and characterized from room temperature to 400 $^\circ$C. The results demonstrate that the device maintains excellent thermal stability even at high temperatures up to 400 $^\circ$C and achieves outstanding performance metrics, including a low dark current of 7.5 pA, a superb UV/visible rejection ratio of $7.8 \times 10^{5}$, and a large detectivity of $1.3 \times 10^{15}$ Jones. This overall performance surpasses that of most other reported Ga$_{2}$O$_{3}$-based transparent UV photodetectors. Therefore, the fabricated high-performance transparent $\beta $-Ga$_{2}$O$_{3}$ solar-blind UV photodetector demonstrates considerable potential for applications in advanced transparent electronics under extreme environments.

关键词: solar-blind UV detector, Ga$_{2}$O$_{3}$ film, transparent, high temperature

Abstract: Transparent ultraviolet (UV) photodetectors have garnered significant interest due to their promising applications in integrated transparent electronics. In this work, a visible transparent solar-blind ultraviolet photodetector with stable crystalline ITO electrodes based on a $\beta$-Ga$_{2}$O$_{3}$ film has been fabricated and characterized from room temperature to 400 $^\circ$C. The results demonstrate that the device maintains excellent thermal stability even at high temperatures up to 400 $^\circ$C and achieves outstanding performance metrics, including a low dark current of 7.5 pA, a superb UV/visible rejection ratio of $7.8 \times 10^{5}$, and a large detectivity of $1.3 \times 10^{15}$ Jones. This overall performance surpasses that of most other reported Ga$_{2}$O$_{3}$-based transparent UV photodetectors. Therefore, the fabricated high-performance transparent $\beta $-Ga$_{2}$O$_{3}$ solar-blind UV photodetector demonstrates considerable potential for applications in advanced transparent electronics under extreme environments.

Key words: solar-blind UV detector, Ga$_{2}$O$_{3}$ film, transparent, high temperature

中图分类号:  (III-V and II-VI semiconductors)

  • 61.72.uj
61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 73.61.Ga (II-VI semiconductors) 85.60.Gz (Photodetectors (including infrared and CCD detectors))