中国物理B ›› 2026, Vol. 35 ›› Issue (6): 68101-068101.doi: 10.1088/1674-1056/ae5172

• • 上一篇    

Influence mechanism of temperature fluctuation on the growth of adjunct diamond under HPHT conditions

Yadong Li(李亚东)1,3, Minghui Jin(金明辉)1, Lang Xie(谢浪)1, Wenjing Huang(黄文静)1, Qing Zhang(张庆)1, Liangchao Chen(陈良超)4, Chao Fang(房超)4, Rui Wang(王睿)2,†, and Chunlei Du(杜春雷)1,‡   

  1. 1 School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China;
    2 Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 401331, China;
    3 Chongqing Jiulongyuan High-tech Industry Group Co., Ltd., Chongqing 400080, China;
    4 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
  • 收稿日期:2026-01-26 修回日期:2026-03-10 接受日期:2026-03-13 发布日期:2026-05-28
  • 通讯作者: Rui Wang, Chunlei Du E-mail:rwang@cqu.edu.cn;305165684@qq.com
  • 基金资助:
    This project was supported by the Natural Science Foundation of Chongqing, China (Grant Nos. CSTB2023NSCQMSX0362 and CSTB2023NSCQ-LZX0100), the Science and Technology Research Program of Chongqing Municipal Education Commission (Grant No. KJZD-K202401403), the Scientific Research Project of the Science and Technology Bureau of Fuling (Grant No. FLKJ2025AAG2003), and the Henan Provincial Natural Science Foundation (Grant No. 252300421475).

Influence mechanism of temperature fluctuation on the growth of adjunct diamond under HPHT conditions

Yadong Li(李亚东)1,3, Minghui Jin(金明辉)1, Lang Xie(谢浪)1, Wenjing Huang(黄文静)1, Qing Zhang(张庆)1, Liangchao Chen(陈良超)4, Chao Fang(房超)4, Rui Wang(王睿)2,†, and Chunlei Du(杜春雷)1,‡   

  1. 1 School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China;
    2 Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 401331, China;
    3 Chongqing Jiulongyuan High-tech Industry Group Co., Ltd., Chongqing 400080, China;
    4 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
  • Received:2026-01-26 Revised:2026-03-10 Accepted:2026-03-13 Published:2026-05-28
  • Contact: Rui Wang, Chunlei Du E-mail:rwang@cqu.edu.cn;305165684@qq.com
  • Supported by:
    This project was supported by the Natural Science Foundation of Chongqing, China (Grant Nos. CSTB2023NSCQMSX0362 and CSTB2023NSCQ-LZX0100), the Science and Technology Research Program of Chongqing Municipal Education Commission (Grant No. KJZD-K202401403), the Scientific Research Project of the Science and Technology Bureau of Fuling (Grant No. FLKJ2025AAG2003), and the Henan Provincial Natural Science Foundation (Grant No. 252300421475).

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摘要： The growth of adjunct crystals significantly impacts the quality of synthetic diamonds, with temperature fluctuations being the primary cause. This study investigates the influence mechanism of temperature fluctuations on the growth of synthetic diamond crystals under high temperature and high pressure (HPHT) conditions through a combination of experimental and numerical simulation approaches. Numerical simulations reveal that ambient temperature variations directly affect the temperature field within the cavity, subsequently altering the carbon solubility in the metal catalyst. Over time, the synthesis process, influenced by varying solubility due to temperature changes, leads to secondary diamond growth, resulting in the formation of adjunct diamonds. This study offers a theoretical explanation of how temperature fluctuations affect the growth of these crystals, providing valuable theoretical guidance for the experimental synthesis of high-quality diamonds in industrial settings.

关键词: high temperature and high pressure (HPHT) method, adjunct diamond, temperature fluctuation

Abstract: The growth of adjunct crystals significantly impacts the quality of synthetic diamonds, with temperature fluctuations being the primary cause. This study investigates the influence mechanism of temperature fluctuations on the growth of synthetic diamond crystals under high temperature and high pressure (HPHT) conditions through a combination of experimental and numerical simulation approaches. Numerical simulations reveal that ambient temperature variations directly affect the temperature field within the cavity, subsequently altering the carbon solubility in the metal catalyst. Over time, the synthesis process, influenced by varying solubility due to temperature changes, leads to secondary diamond growth, resulting in the formation of adjunct diamonds. This study offers a theoretical explanation of how temperature fluctuations affect the growth of these crystals, providing valuable theoretical guidance for the experimental synthesis of high-quality diamonds in industrial settings.

Key words: high temperature and high pressure (HPHT) method, adjunct diamond, temperature fluctuation

中图分类号:  (Diamond)

  • 81.05.ug
07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells)