中国物理B ›› 2026, Vol. 35 ›› Issue (8): 88104-088104.doi: 10.1088/1674-1056/ae0b37

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Improvements in reverse characteristics of diamond Schottky diodes by neutron irradiation

Yang-Fan Li(李洋帆)1,2, Wu-Ying Ma(马武英)1,3, Ruo-Zheng Wang(王若铮)3, Hong-Xia Guo(郭红霞)1, Lin-Yue Liu(刘林月)1, Ze-long Niu(牛泽隆)3, Ru-Xue Bai(白如雪)2, Ji-Fang Li(李济芳)2, Qi Li(李奇)3, Hong-Xing Wang(王宏兴)3,†, and Xiao-Ping Ou-Yang(欧阳晓平)1,‡   

  1. 1 Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    2 The School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
    3 Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • 收稿日期:2025-07-10 修回日期:2025-09-02 接受日期:2025-09-25 发布日期:2026-08-06
  • 通讯作者: Hong-Xing Wang E-mail:hxwangcn@mail.xjtu.edu.cn;oyxp2003@yahoo.com.cn

Improvements in reverse characteristics of diamond Schottky diodes by neutron irradiation

Yang-Fan Li(李洋帆)1,2, Wu-Ying Ma(马武英)1,3, Ruo-Zheng Wang(王若铮)3, Hong-Xia Guo(郭红霞)1, Lin-Yue Liu(刘林月)1, Ze-long Niu(牛泽隆)3, Ru-Xue Bai(白如雪)2, Ji-Fang Li(李济芳)2, Qi Li(李奇)3, Hong-Xing Wang(王宏兴)3,†, and Xiao-Ping Ou-Yang(欧阳晓平)1,‡   

  1. 1 Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    2 The School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
    3 Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:2025-07-10 Revised:2025-09-02 Accepted:2025-09-25 Published:2026-08-06
  • Contact: Hong-Xing Wang E-mail:hxwangcn@mail.xjtu.edu.cn;oyxp2003@yahoo.com.cn

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摘要： Diamond is emerging as a promising material for space applications due to its unique properties and potential high performance in extreme environments. In this work, we systematically study the impact of 1 MeV equivalent neutron irradiation on diamond Schottky barrier diodes (SBDs). According to current-voltage ($I$-$V$) measurements, the Schottky barrier height ($\varPhi_{\rm B}$) of the diamond SBD was increased from 1.23 eV to 1.32 eV, the ideality factor ($n$) was reduced from 1.88 to 1.66, and the reverse breakdown voltage increased by 100 V after neutron irradiation. Furthermore, the carrier concentration across the diamond drift layer was observed to decrease from $5.91 \times 10^{15}$ cm$^{-3}$ to $5.15 \times 10^{15}$ cm$^{-3}$ based on the capacitance-voltage ($C$-$V$) measurement. Moreover, the low-frequency noise analysis also indicated a decrease. Considering the changes in device performance, the metal/semiconductor interface traps were slightly reduced, and the Schottky barrier was significantly improved.

关键词: diamond, Schottky barrier diode, neutron

Abstract: Diamond is emerging as a promising material for space applications due to its unique properties and potential high performance in extreme environments. In this work, we systematically study the impact of 1 MeV equivalent neutron irradiation on diamond Schottky barrier diodes (SBDs). According to current-voltage ($I$-$V$) measurements, the Schottky barrier height ($\varPhi_{\rm B}$) of the diamond SBD was increased from 1.23 eV to 1.32 eV, the ideality factor ($n$) was reduced from 1.88 to 1.66, and the reverse breakdown voltage increased by 100 V after neutron irradiation. Furthermore, the carrier concentration across the diamond drift layer was observed to decrease from $5.91 \times 10^{15}$ cm$^{-3}$ to $5.15 \times 10^{15}$ cm$^{-3}$ based on the capacitance-voltage ($C$-$V$) measurement. Moreover, the low-frequency noise analysis also indicated a decrease. Considering the changes in device performance, the metal/semiconductor interface traps were slightly reduced, and the Schottky barrier was significantly improved.

Key words: diamond, Schottky barrier diode, neutron

中图分类号:  (Diamond)

  • 81.05.ug
78.40.Fy (Semiconductors) 61.80.Hg (Neutron radiation effects)