中国物理B ›› 2026, Vol. 35 ›› Issue (3): 38501-038501.doi: 10.1088/1674-1056/adfbd6

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Contribution of x-ray incident position dependence to energy resolution of Ti/Au transition-edge sensors

Qing-Xiao Ma(马卿效)1,2, Wen Zhang(张文)1,†, Pei-Zhan Li(李佩展)1, Zhi-Fa Feng(冯志发)1,2, Xian-Feng Zhou(周先锋)1,2, Zheng Wang(王争)1, Jia-Qiang Zhong(钟家强)1, Wei Miao(缪巍)1, Yuan Ren(任远)1, Jing Li(李婧)1, and Sheng-Cai Shi(史生才)1,‡   

  1. 1 Purple Mountain Observatory, Chinese Academic of Sciences, Nanjing 210023, China;
    2 University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2025-06-07 修回日期:2025-07-18 接受日期:2025-08-15 出版日期:2026-02-11 发布日期:2026-03-05
  • 通讯作者: Wen Zhang, Sheng-Cai Shi E-mail:wzhang@pmo.ac.cn;scshi@pmo.ac.cn
  • 基金资助:
    Project supported in part by the National Key Research and Development Program of China (Grant No. 2023YFC2206600) and the National Natural Science Foundation of China (Grant Nos. 12293032 and 12020101002).

Contribution of x-ray incident position dependence to energy resolution of Ti/Au transition-edge sensors

Qing-Xiao Ma(马卿效)1,2, Wen Zhang(张文)1,†, Pei-Zhan Li(李佩展)1, Zhi-Fa Feng(冯志发)1,2, Xian-Feng Zhou(周先锋)1,2, Zheng Wang(王争)1, Jia-Qiang Zhong(钟家强)1, Wei Miao(缪巍)1, Yuan Ren(任远)1, Jing Li(李婧)1, and Sheng-Cai Shi(史生才)1,‡   

  1. 1 Purple Mountain Observatory, Chinese Academic of Sciences, Nanjing 210023, China;
    2 University of Science and Technology of China, Hefei 230026, China
  • Received:2025-06-07 Revised:2025-07-18 Accepted:2025-08-15 Online:2026-02-11 Published:2026-03-05
  • Contact: Wen Zhang, Sheng-Cai Shi E-mail:wzhang@pmo.ac.cn;scshi@pmo.ac.cn
  • Supported by:
    Project supported in part by the National Key Research and Development Program of China (Grant No. 2023YFC2206600) and the National Natural Science Foundation of China (Grant Nos. 12293032 and 12020101002).

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摘要： We present the contribution of x-ray incident-position dependence on the absorber to the energy resolution of Ti/Au transition-edge sensors (TESs). The pulse height varies with the position due to insufficient thermal conductivity and geometry of the absorber that degrades the measured energy resolution. We develop a three-dimensional (3D) electro-thermal simulation model and thoroughly study the position dependent contribution to energy resolution ($\Delta E_{\rm p}$) for two presentative absorber structures: an absorber directly deposited on the center of TES sensor (design A) and an absorber cantilevered on the TES sensor by several stems (design B). For design A with a 30 μm$\times$40 μm Au absorber $\Delta E_{\rm p}$ is found to be 9.4 eV, while it is reduced to 1.35 eV for design B with a 100 μm$\times$100 μm Au absorber. Although the contribution of position dependence is relatively small, this study facilitates further optimization of the absorber structure to achieve enhanced energy resolution.

关键词: transition-edge sensors, electro-thermal simulation, position dependence, energy resolution

Abstract: We present the contribution of x-ray incident-position dependence on the absorber to the energy resolution of Ti/Au transition-edge sensors (TESs). The pulse height varies with the position due to insufficient thermal conductivity and geometry of the absorber that degrades the measured energy resolution. We develop a three-dimensional (3D) electro-thermal simulation model and thoroughly study the position dependent contribution to energy resolution ($\Delta E_{\rm p}$) for two presentative absorber structures: an absorber directly deposited on the center of TES sensor (design A) and an absorber cantilevered on the TES sensor by several stems (design B). For design A with a 30 μm$\times$40 μm Au absorber $\Delta E_{\rm p}$ is found to be 9.4 eV, while it is reduced to 1.35 eV for design B with a 100 μm$\times$100 μm Au absorber. Although the contribution of position dependence is relatively small, this study facilitates further optimization of the absorber structure to achieve enhanced energy resolution.

Key words: transition-edge sensors, electro-thermal simulation, position dependence, energy resolution

中图分类号:  (Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge))

  • 85.25.Oj
85.25.Am (Superconducting device characterization, design, and modeling) 72.15.Jf (Thermoelectric and thermomagnetic effects)