Strain tuning of charge density wave and Mott-insulating states in monolayer VTe2

doi:10.1088/1674-1056/ade8e0

中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97103-097103.doi: 10.1088/1674-1056/ade8e0

Strain tuning of charge density wave and Mott-insulating states in monolayer VTe₂

Wenqian Tu(涂文倩)^1,2, Run Lv(吕润)^1,2, Dingfu Shao(邵定夫)¹, Yuping Sun(孙玉平)^3,1,4, and Wenjian Lu(鲁文建)^1,†

1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China;
3 High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;
4 Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2025-04-13 修回日期:2025-06-23 接受日期:2025-06-27 出版日期:2025-08-21 发布日期:2025-09-03
通讯作者: Wenjian Lu E-mail:wjlu@issp.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403203).

Strain tuning of charge density wave and Mott-insulating states in monolayer VTe₂

Wenqian Tu(涂文倩)^1,2, Run Lv(吕润)^1,2, Dingfu Shao(邵定夫)¹, Yuping Sun(孙玉平)^3,1,4, and Wenjian Lu(鲁文建)^1,†

1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China;
3 High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;
4 Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China

Received:2025-04-13 Revised:2025-06-23 Accepted:2025-06-27 Online:2025-08-21 Published:2025-09-03
Contact: Wenjian Lu E-mail:wjlu@issp.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403203).

1. 2025-097103-SI.pdf(2199KB)

摘要/Abstract

摘要： Monolayer vanadium ditelluride (VTe$_{2}$) exhibits a $2\sqrt{3}\times2\sqrt{3}$ charge-density-wave (CDW) order intertwined with a Mott-insulating state. However, the physical mechanisms driving the emergence of the CDW order and the Mott-insulating state are still not well understood. In this study, we systematically investigate the electronic band structure, phonon dispersion, and electron-phonon coupling (EPC) of monolayer VTe$_{2}$ under applied biaxial strain. Our results reveal that the $2\sqrt{3}\times2\sqrt{3}$ CDW phase is metastable in free-standing monolayer VTe$_{2}$ but becomes stabilized under compressive strain below $\varepsilon=-2\%$. The formation of the CDW order originates predominantly from strong EPC, rather than from Fermi-surface nesting. The narrowing of the bandwidth due to the CDW order, combined with correlation effects associated with the V 3d orbitals, collectively drive the system into a Mott-insulating state. Furthermore, we find that tensile strain suppresses the CDW order and induces a superconducting state above a critical strain threshold ($\varepsilon=2\%$). These findings enhance our understanding of correlation physics in monolayer VTe$_{2}$ and provide a pathway for strain-engineered manipulation of quantum phases in two-dimensional transition-metal dichalcogenides.

关键词: charge density wave, Mott-insulating state, superconductivity

Abstract: Monolayer vanadium ditelluride (VTe$_{2}$) exhibits a $2\sqrt{3}\times2\sqrt{3}$ charge-density-wave (CDW) order intertwined with a Mott-insulating state. However, the physical mechanisms driving the emergence of the CDW order and the Mott-insulating state are still not well understood. In this study, we systematically investigate the electronic band structure, phonon dispersion, and electron-phonon coupling (EPC) of monolayer VTe$_{2}$ under applied biaxial strain. Our results reveal that the $2\sqrt{3}\times2\sqrt{3}$ CDW phase is metastable in free-standing monolayer VTe$_{2}$ but becomes stabilized under compressive strain below $\varepsilon=-2\%$. The formation of the CDW order originates predominantly from strong EPC, rather than from Fermi-surface nesting. The narrowing of the bandwidth due to the CDW order, combined with correlation effects associated with the V 3d orbitals, collectively drive the system into a Mott-insulating state. Furthermore, we find that tensile strain suppresses the CDW order and induces a superconducting state above a critical strain threshold ($\varepsilon=2\%$). These findings enhance our understanding of correlation physics in monolayer VTe$_{2}$ and provide a pathway for strain-engineered manipulation of quantum phases in two-dimensional transition-metal dichalcogenides.

Key words: charge density wave, Mott-insulating state, superconductivity

中图分类号: (Charge-density-wave systems)

71.45.Lr

71.30.+h (Metal-insulator transitions and other electronic transitions) 74.20.Pq (Electronic structure calculations)

Wenqian Tu(涂文倩), Run Lv(吕润), Dingfu Shao(邵定夫), Yuping Sun(孙玉平), and Wenjian Lu(鲁文建). Strain tuning of charge density wave and Mott-insulating states in monolayer VTe₂[J]. 中国物理B, 2025, 34(9): 97103-097103.

Wenqian Tu(涂文倩), Run Lv(吕润), Dingfu Shao(邵定夫), Yuping Sun(孙玉平), and Wenjian Lu(鲁文建). Strain tuning of charge density wave and Mott-insulating states in monolayer VTe₂[J]. Chin. Phys. B, 2025, 34(9): 97103-097103.

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Strain tuning of charge density wave and Mott-insulating states in monolayer VTe₂

Strain tuning of charge density wave and Mott-insulating states in monolayer VTe₂

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