中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97104-097104.doi: 10.1088/1674-1056/adf61d
所属专题： TOPICAL REVIEW — Exciton physics: Fundamentals, materials and devices
Probing high-energy and band-edge exciton dynamics in monolayer WS2 using transient absorption spectroscopy under near-resonant and high-energy excitations
Hang Ren(任航)1, Shuai Zhu(朱帅)1, Mingzhao Ouyang(欧阳名钊)1, Jiake Wang(王加科)1, Yuegang Fu(付跃刚)1, Chuxin Yan(闫楚欣)2, Qingbin Wang(王庆彬)2, and Yuanzheng Li(李远征)2,†
- 1 School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China;
2 State Key Laboratory of Integrated Optoelectronics, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
Probing high-energy and band-edge exciton dynamics in monolayer WS2 using transient absorption spectroscopy under near-resonant and high-energy excitations
Hang Ren(任航)1, Shuai Zhu(朱帅)1, Mingzhao Ouyang(欧阳名钊)1, Jiake Wang(王加科)1, Yuegang Fu(付跃刚)1, Chuxin Yan(闫楚欣)2, Qingbin Wang(王庆彬)2, and Yuanzheng Li(李远征)2,†
- 1 School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China;
2 State Key Laboratory of Integrated Optoelectronics, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
摘要： Insight into exciton dynamics of two-dimensional (2D) transition metal dichalcogenides (TMDs) is critical for the optimization of their performance in photonic and optoelectronic devices. Although current researches have primarily concentrated on the near-resonant excitation scenario in 2D TMDs, the case of excitation energies resonating with high-energy excitons or higher energies has yet to be fully elucidated. Here, a comparative analysis is conducted between high-energy excitation (360 nm) and near-resonant excitation (515 nm) utilizing transient absorption spectroscopy to achieve a comprehensive understanding of the exciton dynamics within monolayer WS$_{2}$. It is observed that the high-energy C-exciton can be generated via an up-conversion process under 515 nm excitation, even the energy of which is less than that of the C-exciton. Furthermore, the capacity to efficiently occupy band-edge A-exciton states leads to longer lifetimes for both the C-excitons and the A-excitons under conditions of near-resonant excitation, accompanied by an augmented rate of radiative recombination. This study provides a paradigm for optimizing the performance of 2D TMDs-based devices by offering valuable insights into their exciton dynamics.
中图分类号: (Excitons and related phenomena)
- 71.35.-y