中国物理B ›› 2024, Vol. 33 ›› Issue (12): 126105-126105.doi: 10.1088/1674-1056/ad8ecc

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Pressure-induced superconductivity and phase transition in PbSe and PbTe

Yuyang Jiang(江宇阳)1,†, Cuiying Pei(裴翠颖)1,†, Qi Wang(王琦)1,2, Juefei Wu(吴珏霏)1, Lili Zhang(张丽丽)3, Chao Xiong(熊超)1, and Yanpeng Qi(齐彦鹏)1,2,4,‡   

  1. 1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    2 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China;
    3 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201203, China;
    4 Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, China
  • 收稿日期:2024-09-29 修回日期:2024-11-01 接受日期:2024-11-05 出版日期:2024-12-15 发布日期:2024-11-26
  • 通讯作者: Yanpeng Qi E-mail:qiyp@shanghaitech.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 52272265) and the National Key R&D Program of China (Grant No. 2023YFA1607400). The authors thank the support from Analytical Instrumentation Center (# SPSTAIC10112914), SPST, ShanghaiTech University.

Pressure-induced superconductivity and phase transition in PbSe and PbTe

Yuyang Jiang(江宇阳)1,†, Cuiying Pei(裴翠颖)1,†, Qi Wang(王琦)1,2, Juefei Wu(吴珏霏)1, Lili Zhang(张丽丽)3, Chao Xiong(熊超)1, and Yanpeng Qi(齐彦鹏)1,2,4,‡   

  1. 1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    2 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China;
    3 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201203, China;
    4 Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, China
  • Received:2024-09-29 Revised:2024-11-01 Accepted:2024-11-05 Online:2024-12-15 Published:2024-11-26
  • Contact: Yanpeng Qi E-mail:qiyp@shanghaitech.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 52272265) and the National Key R&D Program of China (Grant No. 2023YFA1607400). The authors thank the support from Analytical Instrumentation Center (# SPSTAIC10112914), SPST, ShanghaiTech University.

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摘要： The IV-VI semiconducting chalcogenides are a large material family with distinct physical behavior. Here, we systematically investigate the effect of pressure on the electronic and crystal structures of PbSe and PbTe by combining high-pressure electrical transport and synchrotron x-ray diffraction (XRD) measurements. The resistivity of PbSe and PbTe changes dramatically under high pressure and a non-monotonic evolution of $\rho (T)$ is observed. Both PbSe and PbTe are found to undergo semiconductor-metal transition upon compression and show superconductivity under higher pressure. The structural evolutions from the Fm$\bar{3}m$ to Pnma phase and then to the Pm$\bar{3}m$ phase in PbSe are verified by the x-ray diffraction. The present findings reveal the internal correlation between the structural evolution and the physical properties in lead chalcogenides.

关键词: IV-VI semiconductor, high pressure, superconductivity, crystal structure

Abstract: The IV-VI semiconducting chalcogenides are a large material family with distinct physical behavior. Here, we systematically investigate the effect of pressure on the electronic and crystal structures of PbSe and PbTe by combining high-pressure electrical transport and synchrotron x-ray diffraction (XRD) measurements. The resistivity of PbSe and PbTe changes dramatically under high pressure and a non-monotonic evolution of $\rho (T)$ is observed. Both PbSe and PbTe are found to undergo semiconductor-metal transition upon compression and show superconductivity under higher pressure. The structural evolutions from the Fm$\bar{3}m$ to Pnma phase and then to the Pm$\bar{3}m$ phase in PbSe are verified by the x-ray diffraction. The present findings reveal the internal correlation between the structural evolution and the physical properties in lead chalcogenides.

Key words: IV-VI semiconductor, high pressure, superconductivity, crystal structure

中图分类号:  (Crystallographic aspects of phase transformations; pressure effects)

  • 61.50.Ks
74.70.-b (Superconducting materials other than cuprates) 74.62.Fj (Effects of pressure)