A macro model of spin-transfer torque magnetic tunnel junction

doi:10.1088/1674-1056/ad8072

中国物理B ›› 2024, Vol. 33 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/ad8072

A macro model of spin-transfer torque magnetic tunnel junction

Ming-Bo Chen(陈明博)^1,2, Kun-Kun Li(李琨琨)², Xiao-Lei Yang(杨晓蕾)², Xue Peng(彭雪)², Wang-Da Li(李旺达)², En-Long Liu(刘恩隆)², Hui-Zhen Wu(吴惠桢)¹, and Shi-Kun He(何世坤)^2,†

1 School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310030, China;
2 Zhejiang HIKSTOR Technology Co., LTD., Hangzhou 311300, China

收稿日期:2024-07-19 修回日期:2024-09-27 接受日期:2024-09-27 出版日期:2024-12-15 发布日期:2024-11-26
通讯作者: Shi-Kun He E-mail:he_shikun@hikstor.com
基金资助:
Project supported by the National Science and Technology Major Project of China (Grant No. 2020AAA0109003).

A macro model of spin-transfer torque magnetic tunnel junction

1 School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310030, China;
2 Zhejiang HIKSTOR Technology Co., LTD., Hangzhou 311300, China

Received:2024-07-19 Revised:2024-09-27 Accepted:2024-09-27 Online:2024-12-15 Published:2024-11-26
Contact: Shi-Kun He E-mail:he_shikun@hikstor.com
Supported by:
Project supported by the National Science and Technology Major Project of China (Grant No. 2020AAA0109003).

摘要/Abstract

摘要： The precise compact modeling of magnetic devices is pivotal for the integrated design of spin-transfer torque magnetic tunnel junction (STT-MTJ) in conjunction with CMOS circuitry. This work presents a macro model for an STT-MTJ which is compatible with SPICE simulation platforms. The model accurately replicates the electrical performance of the MTJ, encompassing the resistance-voltage characteristics and the pulse-width-dependent state switching behavior, and is validated with various experimental data. Additionally, the impact of process variations, particularly those affecting the MTJ diameter and barrier thickness is investigated and summarized in a corner model. Monte Carlo simulations demonstrate that our adaptable and streamlined model can be efficiently incorporated into the design of integrated circuits.

关键词: STT-MTJ, macro model, process corner, Monte Carlo simulation

Abstract: The precise compact modeling of magnetic devices is pivotal for the integrated design of spin-transfer torque magnetic tunnel junction (STT-MTJ) in conjunction with CMOS circuitry. This work presents a macro model for an STT-MTJ which is compatible with SPICE simulation platforms. The model accurately replicates the electrical performance of the MTJ, encompassing the resistance-voltage characteristics and the pulse-width-dependent state switching behavior, and is validated with various experimental data. Additionally, the impact of process variations, particularly those affecting the MTJ diameter and barrier thickness is investigated and summarized in a corner model. Monte Carlo simulations demonstrate that our adaptable and streamlined model can be efficiently incorporated into the design of integrated circuits.

Key words: STT-MTJ, macro model, process corner, Monte Carlo simulation

中图分类号: (Magnetic device characterization, design, and modeling)

85.70.Ay

85.75.Dd (Magnetic memory using magnetic tunnel junctions)

Ming-Bo Chen(陈明博), Kun-Kun Li(李琨琨), Xiao-Lei Yang(杨晓蕾), Xue Peng(彭雪), Wang-Da Li(李旺达), En-Long Liu(刘恩隆), Hui-Zhen Wu(吴惠桢), and Shi-Kun He(何世坤). A macro model of spin-transfer torque magnetic tunnel junction[J]. 中国物理B, 2024, 33(12): 128502-128502.

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A macro model of spin-transfer torque magnetic tunnel junction

A macro model of spin-transfer torque magnetic tunnel junction

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