Surface-sensitive electronic structure of kagome superconductor CsV3Sb5

doi:10.1088/1674-1056/ad7016

中国物理B ›› 2024, Vol. 33 ›› Issue (10): 107403-107403.doi: 10.1088/1674-1056/ad7016

所属专题： SPECIAL TOPIC — Recent progress on kagome metals and superconductors

Surface-sensitive electronic structure of kagome superconductor CsV₃Sb₅

Zhisheng Zhao(赵志生)^1,†, Jianghao Yao(姚江浩)^1,†, Rui Xu(徐瑞)¹, Yuzhe Wang(王禹喆)¹, Sen Liao(廖森)¹, Zhengtai Liu(刘正太)², Dawei Shen (沈大伟)³, Shengtao Cui(崔胜涛)³, Zhe Sun(孙喆)³, Yilin Wang(王义林)¹, Donglai Feng(封东来)^1,3, and Juan Jiang(姜娟)^1,‡

1 School of Emerging Technology and Department of Physics, University of Science and Technology of China, Hefei 230026, China;
2 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;
3 National Synchrotron Radiation Laboratory School of Nuclear Science and Technology, and New Cornerstone Science Laboratory, University of Science and Technology of China, Hefei 230026, China

收稿日期:2024-06-14 修回日期:2024-08-13 接受日期:2024-08-16 出版日期:2024-10-15 发布日期:2024-10-15
通讯作者: Juan Jiang E-mail:jjiangcindy@ustc.edu.cn
基金资助:
This work is supported by the National Natural Science Foundation of China (Grant Nos. 12174362 and 92065202), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302803), and the New Cornerstone Science Foundation. Part of this research used Beamline 03U of the Shanghai Synchrotron Radiation Facility, which is supported by ME2 project under contract No. 11227902 from the National Natural Science Foundation of China.

Surface-sensitive electronic structure of kagome superconductor CsV₃Sb₅

1 School of Emerging Technology and Department of Physics, University of Science and Technology of China, Hefei 230026, China;
2 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;
3 National Synchrotron Radiation Laboratory School of Nuclear Science and Technology, and New Cornerstone Science Laboratory, University of Science and Technology of China, Hefei 230026, China

Received:2024-06-14 Revised:2024-08-13 Accepted:2024-08-16 Online:2024-10-15 Published:2024-10-15
Contact: Juan Jiang E-mail:jjiangcindy@ustc.edu.cn
Supported by:
This work is supported by the National Natural Science Foundation of China (Grant Nos. 12174362 and 92065202), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302803), and the New Cornerstone Science Foundation. Part of this research used Beamline 03U of the Shanghai Synchrotron Radiation Facility, which is supported by ME2 project under contract No. 11227902 from the National Natural Science Foundation of China.

摘要/Abstract

摘要： We systematically study the electronic structure of a kagome superconductor ${\rm Cs}{\rm V}_{{\rm 3}}{{\rm Sb}}_{{\rm 5}}$ at different temperatures covering both its charge density wave state and normal state with angle-resolved photoemission spectroscopy. We observe that the V-shaped band around $\bar{\varGamma }$ shows three different behaviors, referred to as $\alpha /\alpha '$, $\beta $ and $\gamma $, mainly at different temperatures. Detailed investigations confirm that these bands are all from the same bulk Sb-p$_{z}$ origin, but they are quite sensitive to the sample surface conditions mainly modulated by temperature. Thus, the intriguing temperature dependent electronic behavior of the band near $\bar{\varGamma }$ is affected by the sample surface condition, rather than intrinsic electronic behavior originating from the phase transition. Our result systematically reveals the confusing electronic structure behavior of the energy bands around $\bar{\varGamma }$, facilitating further exploration of the novel properties in this material.

关键词: kagome, ARPES, charge density wave, surface sensitive

Abstract: We systematically study the electronic structure of a kagome superconductor ${\rm Cs}{\rm V}_{{\rm 3}}{{\rm Sb}}_{{\rm 5}}$ at different temperatures covering both its charge density wave state and normal state with angle-resolved photoemission spectroscopy. We observe that the V-shaped band around $\bar{\varGamma }$ shows three different behaviors, referred to as $\alpha /\alpha '$, $\beta $ and $\gamma $, mainly at different temperatures. Detailed investigations confirm that these bands are all from the same bulk Sb-p$_{z}$ origin, but they are quite sensitive to the sample surface conditions mainly modulated by temperature. Thus, the intriguing temperature dependent electronic behavior of the band near $\bar{\varGamma }$ is affected by the sample surface condition, rather than intrinsic electronic behavior originating from the phase transition. Our result systematically reveals the confusing electronic structure behavior of the energy bands around $\bar{\varGamma }$, facilitating further exploration of the novel properties in this material.

Key words: kagome, ARPES, charge density wave, surface sensitive

中图分类号: (Electronic structure (photoemission, etc.))

74.25.Jb

74.20.Pq (Electronic structure calculations) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor) 79.60.-i (Photoemission and photoelectron spectra)

Zhisheng Zhao(赵志生), Jianghao Yao(姚江浩), Rui Xu(徐瑞), Yuzhe Wang(王禹喆), Sen Liao(廖森), Zhengtai Liu(刘正太), Dawei Shen (沈大伟), Shengtao Cui(崔胜涛), Zhe Sun(孙喆), Yilin Wang(王义林), Donglai Feng(封东来), and Juan Jiang(姜娟). Surface-sensitive electronic structure of kagome superconductor CsV₃Sb₅[J]. 中国物理B, 2024, 33(10): 107403-107403.

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Surface-sensitive electronic structure of kagome superconductor CsV₃Sb₅

Surface-sensitive electronic structure of kagome superconductor CsV₃Sb₅

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