中国物理B ›› 2024, Vol. 33 ›› Issue (10): 108102-108102.doi: 10.1088/1674-1056/ad62df

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Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

Maoyang Li(李茂洋)1,3, Chaochao Mo(莫超超)2, Peiyu Ji(季佩宇)3,4, Xiaoman Zhang(张潇漫)1,3, Jiali Chen(陈佳丽)6, Lanjian Zhuge(诸葛兰剑)5, Xuemei Wu(吴雪梅)1,3, Haiyun Tan(谭海云)1,3,‡, and Tianyuan Huang(黄天源)1,3,†   

  1. 1 School of Physical Science and Technology, Soochow University, Suzhou 215000, China;
    2 Suzhou Maxwell Technologies Co., Ltd., Suzhou 215000, China;
    3 Jiangsu Key Laboratory of Frontier Material Physics and Devices, Suzhou 215000, China;
    4 School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215000, China;
    5 Analysis and Testing Center, Soochow University, Suzhou 215000, China;
    6 School of Optical and Electronic Information, Suzhou City University & Suzhou Key Laboratory of Biophotonics, Suzhou 215104, China
  • 收稿日期:2024-05-10 修回日期:2024-07-03 接受日期:2024-07-15 发布日期:2024-09-19
  • 通讯作者: Haiyun Tan, Tianyuan Huang E-mail:tyhuang@suda.edu.cn;hytan@suda.edu.cn
  • 基金资助:
    This work was supported by the National Key R&D Program of China (Grant No. 2022YFE03050001) and the National Natural Science Foundation of China (Grant Nos. 12175160 and 12305284).

Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

Maoyang Li(李茂洋)1,3, Chaochao Mo(莫超超)2, Peiyu Ji(季佩宇)3,4, Xiaoman Zhang(张潇漫)1,3, Jiali Chen(陈佳丽)6, Lanjian Zhuge(诸葛兰剑)5, Xuemei Wu(吴雪梅)1,3, Haiyun Tan(谭海云)1,3,‡, and Tianyuan Huang(黄天源)1,3,†   

  1. 1 School of Physical Science and Technology, Soochow University, Suzhou 215000, China;
    2 Suzhou Maxwell Technologies Co., Ltd., Suzhou 215000, China;
    3 Jiangsu Key Laboratory of Frontier Material Physics and Devices, Suzhou 215000, China;
    4 School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215000, China;
    5 Analysis and Testing Center, Soochow University, Suzhou 215000, China;
    6 School of Optical and Electronic Information, Suzhou City University & Suzhou Key Laboratory of Biophotonics, Suzhou 215104, China
  • Received:2024-05-10 Revised:2024-07-03 Accepted:2024-07-15 Published:2024-09-19
  • Contact: Haiyun Tan, Tianyuan Huang E-mail:tyhuang@suda.edu.cn;hytan@suda.edu.cn
  • Supported by:
    This work was supported by the National Key R&D Program of China (Grant No. 2022YFE03050001) and the National Natural Science Foundation of China (Grant Nos. 12175160 and 12305284).

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摘要： We deposited indium-tin-oxide (ITO) films on silicon and quartz substrates by magnetron sputtering technology in pure argon. Using electrostatic quadrupole plasma diagnostic technology, we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface, with special attention to the production of high-energy negative oxygen ions, and elucidate the mechanism behind its production. At the same time, the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films. Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide (TCO) thin films, this study provides valuable physical understanding of optimization of TCO thin film deposition process.

关键词: magnetron sputtering, ion energy, ITO thin film, high energy oxygen anion

Abstract: We deposited indium-tin-oxide (ITO) films on silicon and quartz substrates by magnetron sputtering technology in pure argon. Using electrostatic quadrupole plasma diagnostic technology, we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface, with special attention to the production of high-energy negative oxygen ions, and elucidate the mechanism behind its production. At the same time, the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films. Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide (TCO) thin films, this study provides valuable physical understanding of optimization of TCO thin film deposition process.

Key words: magnetron sputtering, ion energy, ITO thin film, high energy oxygen anion

中图分类号:  (Deposition by sputtering)

  • 81.15.Cd
52.70.-m (Plasma diagnostic techniques and instrumentation) 61.80.Jh (Ion radiation effects) 77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)