中国物理B ›› 2024, Vol. 33 ›› Issue (7): 76801-076801.doi: 10.1088/1674-1056/ad3dd2

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Quantum dynamics within curved thin layers with deviation

Run Cheng(程润)1,†, Hao Zhao(赵浩)3, Cui-Bai Luo(罗翠柏)4, Xuan Zhou(周璇)1, Bi-Li Wang(王必利)1, Yan-Biao Li(李延标)1,‡, and Jun Wang(王骏)2,§   

  1. 1 Physics Department of Basic Department, Army Engineering University of PLA, Nanjing 211101, China;
    2 National Laboratory of Solid State Microstructure, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China;
    3 School of Physics and Electronics, Hunan University, Changsha 410082, China;
    4 Department of Physics, Anhui Normal University, Wuhu 241002, China
  • 收稿日期:2024-02-23 修回日期:2024-04-10 接受日期:2024-04-12 出版日期:2024-06-18 发布日期:2024-06-28
  • 通讯作者: Run Cheng, Yan-Biao Li, Jun Wang E-mail:chengrphy@126.com;liyanbiao@yeah.net;wangj@nju.edu.cn
  • 基金资助:
    Project jointly supported by the National Natural Science Foundation of China (Grant No. 11934008). Cheng R was funded by the Fund from National Laboratory of Solid State Microstructure of Nanjing University (Grant Nos. M35040 and M35053) and the Youth Independent Innovation Fund (Grant No. KYJBJKQTZQ23006).

Quantum dynamics within curved thin layers with deviation

Run Cheng(程润)1,†, Hao Zhao(赵浩)3, Cui-Bai Luo(罗翠柏)4, Xuan Zhou(周璇)1, Bi-Li Wang(王必利)1, Yan-Biao Li(李延标)1,‡, and Jun Wang(王骏)2,§   

  1. 1 Physics Department of Basic Department, Army Engineering University of PLA, Nanjing 211101, China;
    2 National Laboratory of Solid State Microstructure, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China;
    3 School of Physics and Electronics, Hunan University, Changsha 410082, China;
    4 Department of Physics, Anhui Normal University, Wuhu 241002, China
  • Received:2024-02-23 Revised:2024-04-10 Accepted:2024-04-12 Online:2024-06-18 Published:2024-06-28
  • Contact: Run Cheng, Yan-Biao Li, Jun Wang E-mail:chengrphy@126.com;liyanbiao@yeah.net;wangj@nju.edu.cn
  • Supported by:
    Project jointly supported by the National Natural Science Foundation of China (Grant No. 11934008). Cheng R was funded by the Fund from National Laboratory of Solid State Microstructure of Nanjing University (Grant Nos. M35040 and M35053) and the Youth Independent Innovation Fund (Grant No. KYJBJKQTZQ23006).

摘要: Combining the deviation between thin layers' adjacent surfaces with the confining potential method applied to the quantum curved systems, we derive the effective Schrödinger equation describing the particle constrained within a curved layer, accompanied by a general geometric potential $V_{\rm gq}$ composed of a compression-corrected geometric potential $V_{\rm gq}^{*}$ and a novel potential $V_{\rm gq}^{**}$ brought by the deviation. Applying this analysis to the cylindrical layer emerges two types of deviation-induced geometric potential, resulting from the the cases of slant deviation and tangent deviation, respectively, which strongly renormalizes the purely geometric potential and contribute to the energy spectrum based on a very substantial deepening of bound states they offer.

关键词: confining potential method, quantum mechanics, curved thin layer

Abstract: Combining the deviation between thin layers' adjacent surfaces with the confining potential method applied to the quantum curved systems, we derive the effective Schrödinger equation describing the particle constrained within a curved layer, accompanied by a general geometric potential $V_{\rm gq}$ composed of a compression-corrected geometric potential $V_{\rm gq}^{*}$ and a novel potential $V_{\rm gq}^{**}$ brought by the deviation. Applying this analysis to the cylindrical layer emerges two types of deviation-induced geometric potential, resulting from the the cases of slant deviation and tangent deviation, respectively, which strongly renormalizes the purely geometric potential and contribute to the energy spectrum based on a very substantial deepening of bound states they offer.

Key words: confining potential method, quantum mechanics, curved thin layer

中图分类号:  (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

  • 68.65.-k
03.65.-w (Quantum mechanics) 02.40.-k (Geometry, differential geometry, and topology)