P-type cold-source field-effect transistors with TcX2 and ReX2 (X=S, Se) cold source electrodes: A computational study

doi:10.1088/1674-1056/ad0116

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 127203-127203.doi: 10.1088/1674-1056/ad0116

所属专题： SPECIAL TOPIC—Post-Moore era: Materials and device physics

P-type cold-source field-effect transistors with TcX₂ and ReX₂ (X=S, Se) cold source electrodes: A computational study

Qianwen Wang(汪倩文)¹, Jixuan Wu(武继璇)², Xuepeng Zhan(詹学鹏)², Pengpeng Sang(桑鹏鹏)^2,†, and Jiezhi Chen(陈杰智)^2,‡

1 School of Information Science & Technology, Qingdao University of Science & Technology, Qingdao 266000, China;
2 School of Information Science and Engineering, Shandong University, Qingdao 266000, China

收稿日期:2023-07-26 修回日期:2023-09-12 接受日期:2023-10-07 出版日期:2023-11-14 发布日期:2023-11-30
通讯作者: Pengpeng Sang, Jiezhi Chen E-mail:ppsang@sdu.edu.cn;chen.jiezhi@sdu.edu.cn
基金资助:
Project was supported by the National Natural Science Foundation of China (Grant Nos.62034006, 92264201, and 62104134) and the Natural Science Foundation of Shandong Province of China (Grant Nos.ZR2023QF076 and ZR2023QF054).

P-type cold-source field-effect transistors with TcX₂ and ReX₂ (X=S, Se) cold source electrodes: A computational study

Qianwen Wang(汪倩文)¹, Jixuan Wu(武继璇)², Xuepeng Zhan(詹学鹏)², Pengpeng Sang(桑鹏鹏)^2,†, and Jiezhi Chen(陈杰智)^2,‡

1 School of Information Science & Technology, Qingdao University of Science & Technology, Qingdao 266000, China;
2 School of Information Science and Engineering, Shandong University, Qingdao 266000, China

Received:2023-07-26 Revised:2023-09-12 Accepted:2023-10-07 Online:2023-11-14 Published:2023-11-30
Contact: Pengpeng Sang, Jiezhi Chen E-mail:ppsang@sdu.edu.cn;chen.jiezhi@sdu.edu.cn
Supported by:
Project was supported by the National Natural Science Foundation of China (Grant Nos.62034006, 92264201, and 62104134) and the Natural Science Foundation of Shandong Province of China (Grant Nos.ZR2023QF076 and ZR2023QF054).

1. 2023-127203-SI.pdf(528KB)

摘要/Abstract

摘要： Cold-source field-effect transistors (CS-FETs) have been developed to overcome the major challenge of power dissipation in modern integrated circuits. Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing (SS). In this work, regarding the p-type CS-FETs, we propose TcX₂ and ReX₂ (X = S, Se) as the injection source to realize the sub-thermal switching for holes. First-principles calculations unveils the cold-metal characteristics of monolayer TcX₂ and ReX₂, possessing a sub-gap below the Fermi level and a decreasing DOS with energy. Quantum device simulations demonstrate that TcX₂ and ReX₂ can enable the cold source effects in WSe₂ p-type FETs, achieving steep SS of 29-38 mV/dec and high on/off ratios of (2.3-5.6)×10⁷. Moreover, multilayer ReS₂ retains the cold metal characteristic, thus ensuring similar CS-FET performances to that of the monolayer source. This work underlines the significance of cold metals for the design of p-type CS-FETs.

关键词: cold metal, steep-slope transistor, subthreshold swing, quantum device simulations

Abstract: Cold-source field-effect transistors (CS-FETs) have been developed to overcome the major challenge of power dissipation in modern integrated circuits. Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing (SS). In this work, regarding the p-type CS-FETs, we propose TcX₂ and ReX₂ (X = S, Se) as the injection source to realize the sub-thermal switching for holes. First-principles calculations unveils the cold-metal characteristics of monolayer TcX₂ and ReX₂, possessing a sub-gap below the Fermi level and a decreasing DOS with energy. Quantum device simulations demonstrate that TcX₂ and ReX₂ can enable the cold source effects in WSe₂ p-type FETs, achieving steep SS of 29-38 mV/dec and high on/off ratios of (2.3-5.6)×10⁷. Moreover, multilayer ReS₂ retains the cold metal characteristic, thus ensuring similar CS-FET performances to that of the monolayer source. This work underlines the significance of cold metals for the design of p-type CS-FETs.

Key words: cold metal, steep-slope transistor, subthreshold swing, quantum device simulations

中图分类号: (Other topics in electronic transport in condensed matter)

72.90.+y

81.05.Zx (New materials: theory, design, and fabrication) 05.60.Gg (Quantum transport) 85.30.Tv (Field effect devices)

Qianwen Wang(汪倩文), Jixuan Wu(武继璇), Xuepeng Zhan(詹学鹏),Pengpeng Sang(桑鹏鹏), and Jiezhi Chen(陈杰智). P-type cold-source field-effect transistors with TcX₂ and ReX₂ (X=S, Se) cold source electrodes: A computational study[J]. 中国物理B, 2023, 32(12): 127203-127203.

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P-type cold-source field-effect transistors with TcX₂ and ReX₂ (X=S, Se) cold source electrodes: A computational study

P-type cold-source field-effect transistors with TcX₂ and ReX₂ (X=S, Se) cold source electrodes: A computational study

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