Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

doi:10.1088/1674-1056/accf7f

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 17201-17201.doi: 10.1088/1674-1056/accf7f

所属专题： SPECIAL TOPIC — States and new effects in nonequilibrium

Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

Panpan Huang(黄盼盼)¹, Youlu Zhang(张有禄)², Kai Hu(胡凯)¹, Jingbo Qi(齐静波)^2,3,†, Dainan Zhang(张岱南)^1,2,‡, and Liang Cheng(程亮)^2,3,§

1 School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China;
3 School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China

收稿日期:2023-03-09 修回日期:2023-04-11 接受日期:2023-04-24 出版日期:2023-12-13 发布日期:2023-12-28
通讯作者: Jingbo Qi, Dainan Zhang, Liang Cheng E-mail:jbqi@uestc.edu.cn;dnzhang@uestc.edu.cn;chengliang@uestc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12004067, 11974070, 62027807, and 52272137) and the National Key R&D Program of China (Grant No. 2022YFA1403000).

Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

Panpan Huang(黄盼盼)¹, Youlu Zhang(张有禄)², Kai Hu(胡凯)¹, Jingbo Qi(齐静波)^2,3,†, Dainan Zhang(张岱南)^1,2,‡, and Liang Cheng(程亮)^2,3,§

1 School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China;
3 School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China

Received:2023-03-09 Revised:2023-04-11 Accepted:2023-04-24 Online:2023-12-13 Published:2023-12-28
Contact: Jingbo Qi, Dainan Zhang, Liang Cheng E-mail:jbqi@uestc.edu.cn;dnzhang@uestc.edu.cn;chengliang@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12004067, 11974070, 62027807, and 52272137) and the National Key R&D Program of China (Grant No. 2022YFA1403000).

摘要/Abstract

摘要： We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers. The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm, and its pump-induced photoconductivity can be explained by the Drude—Smith model. The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture. The first- and second-order recombination rates are obtained by the rate equation fitting, which are (2.6±1.1)×10^-2 ps^-1 and (6.6±1.8)×10^-19 cm³·ps^-1, respectively. Meanwhile, we also obtain the diffusion length of photo-generated carriers in GeSn, which is about 0.4 μm, and it changes with the pump delay time. These results are important for the GeSn-based infrared optoelectronic devices, and demonstrate that GeSn materials can be applied to high-speed optoelectronic detectors and other applications.

关键词: GeSn thin film, time-resolved THz spectroscopy, ultrafast dynamics, carrier recombination

Abstract: We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers. The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm, and its pump-induced photoconductivity can be explained by the Drude—Smith model. The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture. The first- and second-order recombination rates are obtained by the rate equation fitting, which are (2.6±1.1)×10^-2 ps^-1 and (6.6±1.8)×10^-19 cm³·ps^-1, respectively. Meanwhile, we also obtain the diffusion length of photo-generated carriers in GeSn, which is about 0.4 μm, and it changes with the pump delay time. These results are important for the GeSn-based infrared optoelectronic devices, and demonstrate that GeSn materials can be applied to high-speed optoelectronic detectors and other applications.

Key words: GeSn thin film, time-resolved THz spectroscopy, ultrafast dynamics, carrier recombination

中图分类号: (Charge carriers: generation, recombination, lifetime, and trapping)

72.20.Jv

71.20.Nr (Semiconductor compounds) 72.15.Lh (Relaxation times and mean free paths) 72.20.-i (Conductivity phenomena in semiconductors and insulators)

Panpan Huang(黄盼盼), Youlu Zhang(张有禄), Kai Hu(胡凯), Jingbo Qi(齐静波), Dainan Zhang(张岱南), and Liang Cheng(程亮). Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy[J]. 中国物理B, 2024, 33(1): 17201-17201.

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Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

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