Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3

doi:10.1088/1674-1056/acc3fb

中国物理B ›› 2023, Vol. 32 ›› Issue (8): 87102-087102.doi: 10.1088/1674-1056/acc3fb

Helicity-dependent photoconductance of the edge states in the topological insulator Bi₂Te₃

Yuchao Zhou(周宇超)¹, Jinling Yu(俞金玲)^1,†, Yonghai Chen(陈涌海)^2,3, Yunfeng Lai(赖云锋)¹, and Shuying Cheng(程树英)^1,4

1. Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
4. Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, China

收稿日期:2023-01-19 修回日期:2023-03-04 接受日期:2023-03-14 发布日期:2023-07-26
通讯作者: Jinling Yu E-mail:jlyu@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos.62074036 and 61674038) and the National Key Research and Development Program of China (Grant No.2016YFB0402303).

Helicity-dependent photoconductance of the edge states in the topological insulator Bi₂Te₃

Yuchao Zhou(周宇超)¹, Jinling Yu(俞金玲)^1,†, Yonghai Chen(陈涌海)^2,3, Yunfeng Lai(赖云锋)¹, and Shuying Cheng(程树英)^1,4

1. Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
4. Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, China

Received:2023-01-19 Revised:2023-03-04 Accepted:2023-03-14 Published:2023-07-26
Contact: Jinling Yu E-mail:jlyu@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos.62074036 and 61674038) and the National Key Research and Development Program of China (Grant No.2016YFB0402303).

摘要/Abstract

摘要： The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi₂Te₃ films is investigated. It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi₂Te₃ film shows an opposite sign with that on the right edge. In addition, the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field, and it reverses the sign with the reversal of the electric field. As the thickness of the Bi₂Te₃ film increases, the helicity-dependent photoconductivity current also increases. Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling (SOC) or the SOC introduced by the chiral impurities or defects.

关键词: helicity-dependent photoconductance, Bi₂Te₃, edge states, spin orbit coupling

Abstract: The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi₂Te₃ films is investigated. It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi₂Te₃ film shows an opposite sign with that on the right edge. In addition, the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field, and it reverses the sign with the reversal of the electric field. As the thickness of the Bi₂Te₃ film increases, the helicity-dependent photoconductivity current also increases. Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling (SOC) or the SOC introduced by the chiral impurities or defects.

Key words: helicity-dependent photoconductance, Bi₂Te₃, edge states, spin orbit coupling

中图分类号: (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

71.70.Ej

72.25.Fe (Optical creation of spin polarized carriers) 75.70.Tj (Spin-orbit effects) 75.76.+j (Spin transport effects)

Yuchao Zhou(周宇超), Jinling Yu(俞金玲), Yonghai Chen(陈涌海), Yunfeng Lai(赖云锋), and Shuying Cheng(程树英). Helicity-dependent photoconductance of the edge states in the topological insulator Bi₂Te₃[J]. 中国物理B, 2023, 32(8): 87102-087102.

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Helicity-dependent photoconductance of the edge states in the topological insulator Bi₂Te₃

Helicity-dependent photoconductance of the edge states in the topological insulator Bi₂Te₃

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