Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

doi:10.1088/1674-1056/22/6/067304

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/22/6/067304

所属专题： TOPICAL REVIEW — Topological insulator

• TOPICAL REVIEW—Topological insulator • 上一篇下一篇

Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

高春雷^a, 钱冬^a, 刘灿华^a, 贾金锋^a, 刘锋^b

a Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;
b Department of Materials Science & Engineering, University of Utah, Salt Lake City, Utah 84112, USA

收稿日期:2013-04-20 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the National Basic Research Program of China (Grants Nos. 2012CB927401, 2011CB921902, 2013CB921902, and 2011CB922200), the National Natural Science Foundation of China (Grants Nos. 91021002, 11174199, 11134008, and 11274228), and SCSTC (Grant Nos. 11JC1405000, 11PJ1405200, and 12JC1405300).

Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

Gao Chun-Lei (高春雷)^a, Qian Dong (钱冬)^a, Liu Can-Hua (刘灿华)^a, Jia Jin-Feng (贾金锋)^a, Liu Feng (刘锋)^b

a Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;
b Department of Materials Science & Engineering, University of Utah, Salt Lake City, Utah 84112, USA

Received:2013-04-20 Online:2013-05-01 Published:2013-05-01
Contact: Gao Chun-Lei, Qian Dong E-mail:clgao@sjtu.edu.cn; dqian@stju.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grants Nos. 2012CB927401, 2011CB921902, 2013CB921902, and 2011CB922200), the National Natural Science Foundation of China (Grants Nos. 91021002, 11174199, 11134008, and 11274228), and SCSTC (Grant Nos. 11JC1405000, 11PJ1405200, and 12JC1405300).

摘要/Abstract

摘要： Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi (111) bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi (111) ultrathin bilayers on topological insulator Bi₂Te₃ or Bi₂Se₃ substrates. In this review, we started from the growth mode of Bi (111) bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and first principles calculations.

关键词: topological insulators, edge states, electronic structures, Bi bilayer

Abstract: Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi (111) bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi (111) ultrathin bilayers on topological insulator Bi₂Te₃ or Bi₂Se₃ substrates. In this review, we started from the growth mode of Bi (111) bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and first principles calculations.

Key words: topological insulators, edge states, electronic structures, Bi bilayer

中图分类号:

73.20.r

74.25.Jb (Electronic structure (photoemission, etc.)) 71.20.-b (Electron density of states and band structure of crystalline solids)

高春雷, 钱冬, 刘灿华, 贾金锋, 刘锋. Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)[J]. 中国物理B, 2013, 22(6): 67304-067304.

Gao Chun-Lei (高春雷), Qian Dong (钱冬), Liu Can-Hua (刘灿华), Jia Jin-Feng (贾金锋), Liu Feng (刘锋). Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)[J]. Chin. Phys. B, 2013, 22(6): 67304-067304.

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Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

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