Thickness-dependent exciton relaxation dynamics of few-layer rhenium diselenide

doi:10.1088/1674-1056/acc1d3

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 67203-067203.doi: 10.1088/1674-1056/acc1d3

Thickness-dependent exciton relaxation dynamics of few-layer rhenium diselenide

Chang-Fu Huo(霍唱福)^1,†, Tiantian Yun(云田田)^1,†, Xiao-Qing Yan(鄢小卿)^1,‡, Zewen Liu(刘泽文)¹, Xin Zhao(赵欣)², Wenxiong Xu(许文雄)³, Qiannan Cui(崔乾楠)³, Zhi-Bo Liu(刘智波)^1,4,§, and Jian-Guo Tian(田建国)¹

1 Key Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin 300071, China;
2 School of Physical Science and Technology, Tiangong University, Tianjin 300387, China;
3 State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China;
4 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

收稿日期:2022-12-16 修回日期:2023-02-16 接受日期:2023-03-07 出版日期:2023-05-17 发布日期:2023-06-07
通讯作者: Xiao-Qing Yan, Zhi-Bo Liu E-mail:yanxq01@nankai.edu.cn;liuzb@nankai.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12074202, 12174207, and 11974190) and the Natural Science Foundation of Tianjin City (Grant Nos. 20JCQNJC00020 and 22JCYBJC00390).

Thickness-dependent exciton relaxation dynamics of few-layer rhenium diselenide

1 Key Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin 300071, China;
2 School of Physical Science and Technology, Tiangong University, Tianjin 300387, China;
3 State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China;
4 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

Received:2022-12-16 Revised:2023-02-16 Accepted:2023-03-07 Online:2023-05-17 Published:2023-06-07
Contact: Xiao-Qing Yan, Zhi-Bo Liu E-mail:yanxq01@nankai.edu.cn;liuzb@nankai.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12074202, 12174207, and 11974190) and the Natural Science Foundation of Tianjin City (Grant Nos. 20JCQNJC00020 and 22JCYBJC00390).

1. 2023-067203-SI.pdf(1045KB)

摘要/Abstract

摘要： Rhenium diselenide (ReSe₂) has gathered much attention due to its low symmetry of lattice structure, which makes it possess in-plane anisotropic optical, electrical as well as excitonic properties and further enables ReSe₂ have an important application in optoelectronic devices. Here, we report the thickness-dependent exciton relaxation dynamics of mechanically exfoliated few-layer ReSe₂ flakes by using time-resolved pump-probe transient transmission spectroscopies. The results reveal two thickness-dependent relaxation processes of the excitons. The fast one correlates with the exciton formation (i.e., the conversion of hot carriers to excitons), while the slow one is attributed to the exciton recombination dominated by defect-assisted exciton trapping besides photon emission channel. The decrease of scattering probability caused by defects leads to the increase of fast lifetime with thickness, and the increase of slow lifetime with thickness is related to the trap-mediated exciton depopulation induced by surface defects. Polarization-dependent transient spectroscopy indicates the isotropic exciton dynamics in the two-dimensional (2D) plane. These results are insightful for better understanding of excitonic dynamics of ReSe₂ materials and its application in future optoelectronic and electronic devices.

关键词: rhenium diselenide, pump-probe spectroscopy, carrier dynamics, exciton

Abstract: Rhenium diselenide (ReSe₂) has gathered much attention due to its low symmetry of lattice structure, which makes it possess in-plane anisotropic optical, electrical as well as excitonic properties and further enables ReSe₂ have an important application in optoelectronic devices. Here, we report the thickness-dependent exciton relaxation dynamics of mechanically exfoliated few-layer ReSe₂ flakes by using time-resolved pump-probe transient transmission spectroscopies. The results reveal two thickness-dependent relaxation processes of the excitons. The fast one correlates with the exciton formation (i.e., the conversion of hot carriers to excitons), while the slow one is attributed to the exciton recombination dominated by defect-assisted exciton trapping besides photon emission channel. The decrease of scattering probability caused by defects leads to the increase of fast lifetime with thickness, and the increase of slow lifetime with thickness is related to the trap-mediated exciton depopulation induced by surface defects. Polarization-dependent transient spectroscopy indicates the isotropic exciton dynamics in the two-dimensional (2D) plane. These results are insightful for better understanding of excitonic dynamics of ReSe₂ materials and its application in future optoelectronic and electronic devices.

Key words: rhenium diselenide, pump-probe spectroscopy, carrier dynamics, exciton

中图分类号: (Transition-metal compounds)

72.80.Ga

78.20.-e (Optical properties of bulk materials and thin films) 78.47.D- (Time resolved spectroscopy (>1 psec)) 78.47.jb (Transient absorption)

Chang-Fu Huo(霍唱福), Tiantian Yun(云田田), Xiao-Qing Yan(鄢小卿), Zewen Liu(刘泽文), Xin Zhao(赵欣), Wenxiong Xu(许文雄), Qiannan Cui(崔乾楠), Zhi-Bo Liu(刘智波), and Jian-Guo Tian(田建国). Thickness-dependent exciton relaxation dynamics of few-layer rhenium diselenide[J]. 中国物理B, 2023, 32(6): 67203-067203.

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Thickness-dependent exciton relaxation dynamics of few-layer rhenium diselenide

Thickness-dependent exciton relaxation dynamics of few-layer rhenium diselenide

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