A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

doi:10.1088/1674-1056/acbe32

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 68501-068501.doi: 10.1088/1674-1056/acbe32

A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

Bin Lu(芦宾)¹, Xin Ma(马鑫)¹, Dawei Wang(王大为)¹, Guoqiang Chai(柴国强)¹, Linpeng Dong(董林鹏)², and Yuanhao Miao(苗渊浩)^3,†

1 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030000, China;
2 Shaanxi Province Key Laboratory of Thin Films Technology&Optical Test, Xi'an Technological University, Xi'an 710032, China;
3 Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China

收稿日期:2022-11-13 修回日期:2023-01-06 接受日期:2023-02-23 出版日期:2023-05-17 发布日期:2023-05-24
通讯作者: Yuanhao Miao E-mail:miaoyuanhao@giics.com.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62004119 and 62201332), and the Applied Basic Research Plan of Shanxi Province, China (Grant Nos. 20210302124647 and 20210302124028).

A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

Bin Lu(芦宾)¹, Xin Ma(马鑫)¹, Dawei Wang(王大为)¹, Guoqiang Chai(柴国强)¹, Linpeng Dong(董林鹏)², and Yuanhao Miao(苗渊浩)^3,†

1 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030000, China;
2 Shaanxi Province Key Laboratory of Thin Films Technology&Optical Test, Xi'an Technological University, Xi'an 710032, China;
3 Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China

Received:2022-11-13 Revised:2023-01-06 Accepted:2023-02-23 Online:2023-05-17 Published:2023-05-24
Contact: Yuanhao Miao E-mail:miaoyuanhao@giics.com.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62004119 and 62201332), and the Applied Basic Research Plan of Shanxi Province, China (Grant Nos. 20210302124647 and 20210302124028).

摘要/Abstract

摘要： Nanowires with gate-all-around (GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects, and tunneling field effect transistors (TFETs) based on GAA structures also present improved performance. In this paper, a non-quasi-static (NQS) device model is developed for nanowire GAA TFETs. The model can predict the transient current and capacitance varying with operation frequency, which is beyond the ability of the quasi-static (QS) model published before. Excellent agreements between the model results and numerical simulations are obtained. Moreover, the NQS model is derived from the published QS model including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Therefore, the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

关键词: tunneling field effect transistor, relaxation time approximation, non-quasi-static, non-quasi-static

Abstract: Nanowires with gate-all-around (GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects, and tunneling field effect transistors (TFETs) based on GAA structures also present improved performance. In this paper, a non-quasi-static (NQS) device model is developed for nanowire GAA TFETs. The model can predict the transient current and capacitance varying with operation frequency, which is beyond the ability of the quasi-static (QS) model published before. Excellent agreements between the model results and numerical simulations are obtained. Moreover, the NQS model is derived from the published QS model including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Therefore, the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

Key words: tunneling field effect transistor, relaxation time approximation, non-quasi-static, non-quasi-static

中图分类号: (Field effect devices)

85.30.Tv

85.35.-p (Nanoelectronic devices) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 61.82.Fk (Semiconductors)

Bin Lu(芦宾), Xin Ma(马鑫), Dawei Wang(王大为), Guoqiang Chai(柴国强),Linpeng Dong(董林鹏), and Yuanhao Miao(苗渊浩). A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors[J]. 中国物理B, 2023, 32(6): 68501-068501.

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A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

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