中国物理B ›› 2023, Vol. 32 ›› Issue (5): 50701-050701.doi: 10.1088/1674-1056/ac89da

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Construction of multi-walled carbon nanotubes/ZnSnO3 heterostructures for enhanced acetone sensing performance

Liyong Du(杜丽勇)1,† and Heming Sun(孙鹤鸣)2   

  1. 1 Department of Materials and Chemical Engineering, Taiyuan University, Taiyuan 030032, China;
    2 College of Physics, Jilin University, Changchun 130012, China
  • 收稿日期:2022-06-07 修回日期:2022-08-10 接受日期:2022-08-16 出版日期:2023-04-21 发布日期:2023-04-26
  • 通讯作者: Liyong Du E-mail:495431287@qq.com
  • 基金资助:
    Project supported by Fundamental Research Program of Shanxi Province, China (Grant No. 202103021223004) and Fundamental Research Fund of Taiyuan University (Grant No. 21TYKQ21).

Construction of multi-walled carbon nanotubes/ZnSnO3 heterostructures for enhanced acetone sensing performance

Liyong Du(杜丽勇)1,† and Heming Sun(孙鹤鸣)2   

  1. 1 Department of Materials and Chemical Engineering, Taiyuan University, Taiyuan 030032, China;
    2 College of Physics, Jilin University, Changchun 130012, China
  • Received:2022-06-07 Revised:2022-08-10 Accepted:2022-08-16 Online:2023-04-21 Published:2023-04-26
  • Contact: Liyong Du E-mail:495431287@qq.com
  • Supported by:
    Project supported by Fundamental Research Program of Shanxi Province, China (Grant No. 202103021223004) and Fundamental Research Fund of Taiyuan University (Grant No. 21TYKQ21).

摘要: Carbon nanotubes (CNTs) have attracted many researcher's attention in gas sensing field because of their excellent physical and chemical properties. Herein, multi-walled carbon nanotubes (MWCNTs)/ZnSnO3 heterostructures have been obtained by a simple hydrothermal method without additional annealing process. The structural and composition information are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). The acetone sensing properties of pure MWCNTs, ZnSnO3 and MWCNTs/ZnSnO3 heterostructures are systematically investigated, respectively. The results show that MWCNTs/ZnSnO3 heterostructures have better sensing properties compared with pure MWCNTs and ZnSnO3 sample. Specifically, MWCNTs/ZnSnO3 heterostructures exhibit not only high responses of 24.1 and rapid response/recovery speed of 1 s/9 s to 100 ppm acetone, but also relatively good repeatability and long-term stability. The enhanced sensing performance is analyzed in detail. In addition, this work provides the experimental and theory basis for synthesis of high-performance MWCNT-based chemical sensors.

关键词: carbon nanotube, ZnSnO3, p-n heterostructures, acetone

Abstract: Carbon nanotubes (CNTs) have attracted many researcher's attention in gas sensing field because of their excellent physical and chemical properties. Herein, multi-walled carbon nanotubes (MWCNTs)/ZnSnO3 heterostructures have been obtained by a simple hydrothermal method without additional annealing process. The structural and composition information are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). The acetone sensing properties of pure MWCNTs, ZnSnO3 and MWCNTs/ZnSnO3 heterostructures are systematically investigated, respectively. The results show that MWCNTs/ZnSnO3 heterostructures have better sensing properties compared with pure MWCNTs and ZnSnO3 sample. Specifically, MWCNTs/ZnSnO3 heterostructures exhibit not only high responses of 24.1 and rapid response/recovery speed of 1 s/9 s to 100 ppm acetone, but also relatively good repeatability and long-term stability. The enhanced sensing performance is analyzed in detail. In addition, this work provides the experimental and theory basis for synthesis of high-performance MWCNT-based chemical sensors.

Key words: carbon nanotube, ZnSnO3, p-n heterostructures, acetone

中图分类号:  (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

  • 07.07.Df
68.47.Gh (Oxide surfaces) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)