中国物理B ›› 2020, Vol. 29 ›› Issue (8): 84203-084203.doi: 10.1088/1674-1056/ab9443
• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇 下一篇
Menghan Liu(刘梦涵), Peng Chen(陈鹏), Zili Xie(谢自力), Xiangqian Xiu(修向前), Dunjun Chen(陈敦军), Bin Liu(刘斌), Ping Han(韩平), Yi Shi(施毅), Rong Zhang(张荣), Youdou Zheng(郑有炓), Kai Cheng(程凯), Liyang Zhang(张丽阳)
Menghan Liu(刘梦涵)1, Peng Chen(陈鹏)1, Zili Xie(谢自力)1, Xiangqian Xiu(修向前)1, Dunjun Chen(陈敦军)1, Bin Liu(刘斌)1, Ping Han(韩平)1, Yi Shi(施毅)1, Rong Zhang(张荣)1, Youdou Zheng(郑有炓)1, Kai Cheng(程凯)2, Liyang Zhang(张丽阳)2
摘要: Resonance effects caused by the photon-electron interaction are a focus of attention in semiconductor optoelectronics, as they are able to increase the efficiency of emission. GaN-on-silicon microdisks can provide a perfect cavity structure for such resonance to occur. Here we report GaN-based microdisks with different diameters, based on a standard blue LED wafer on a Si substrate. A confocal photoluminescence spectroscopy is performed to analyze the properties of all microdisks. Then, we systematically study the effects of radial modes and axial modes of these microdisks on photon-electron coupling efficiency by using three-dimensional finite-difference time-domain simulations. For thick microdisks, photon-electron coupling efficiency is found to greatly depend on the distributions of both the radial modes and the axial modes, and the inclined sidewalls make significant influences on the axial mode distributions. These results are important for realization of high-efficiency resonant emission in GaN-based microcavity devices.
中图分类号: (Microcavity and microdisk lasers)