TOPICAL REVIEW — Quantum dot displays
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1.
InP quantum dots-based electroluminescent devices
吴倩倩, 曹璠, 孔令媚, 杨绪勇
中国物理B 2019, 28 (
11
): 118103-118103. DOI: 10.1088/1674-1056/ab4cdb
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Indium phosphide (InP) quantum dots (QDs) have shown great potential to replace the widely applied toxic cadmium-containing and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity. Recently, electrically driven red and green InP-based quantum-dot light-emitting diodes (QLEDs) have achieved great progress in external quantum efficiency (EQE), reaching up to 12.2% and 6.3%, respectively. Despite the relatively poor device performance comparing with cadmium selenide (CdSe)-and perovskite-based QLEDs, these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient, high-color-quality thin-film display and solid-state lighting applications. In this article, recent advances in the research of the InP-based QLEDs have been discussed, with the main focus on device structure selection and interface research, as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.
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2.
Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes
刘皓宸, 钟华英, 郑凡凯, 谢阅, 李德鹏, 吴丹, 周子明, 孙小卫, 王恺
中国物理B 2019, 28 (
12
): 128504-128504. DOI: 10.1088/1674-1056/ab50fa
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This paper reviews the recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX={PbS}, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.
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