Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies

doi:10.1088/1674-1056/28/6/068502

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/28/6/068502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies

Taha Haddadifam, Mohammad Azim Karami

Iran University of Science and Technology

收稿日期:2019-01-11 修回日期:2019-04-08 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Mohammad Azim Karami E-mail:karami@iust.ac.ir

Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies

Taha Haddadifam, Mohammad Azim Karami

Iran University of Science and Technology

Received:2019-01-11 Revised:2019-04-08 Online:2019-06-05 Published:2019-06-05
Contact: Mohammad Azim Karami E-mail:karami@iust.ac.ir

摘要/Abstract

摘要：

This paper proposes two optimal designs of single photon avalanche diodes (SPADs) minimizing dark count rate (DCR). The first structure is introduced as p⁺/pwell/nwell, in which a specific shallow pwell layer is added between p⁺ and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7% and 8.5% reduction of p⁺/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n⁺/nwell/pwell, in which a specific shallow nwell layer is added between n⁺ and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p⁺/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases (about 6 volts), the n⁺/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier (dSiPM) due to low DCR. On the other hand, the p⁺/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures (above 50 ℃) due to lower DCR value.

关键词: single-photon avalanche diode, digital silicon photomultiplier, dark count rate

Abstract:

Key words: single-photon avalanche diode, digital silicon photomultiplier, dark count rate

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.60.Dw (Photodiodes; phototransistors; photoresistors) 85.60.Gz (Photodetectors (including infrared and CCD detectors)) 42.79.Pw (Imaging detectors and sensors)

Taha Haddadifam, Mohammad Azim Karami. Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies[J]. 中国物理B, 2019, 28(6): 68502-068502.

Taha Haddadifam, Mohammad Azim Karami. Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies[J]. Chin. Phys. B, 2019, 28(6): 68502-068502.

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Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies

Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies

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