中国物理B ›› 2019, Vol. 28 ›› Issue (1): 10702-010702.doi: 10.1088/1674-1056/28/1/010702

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Standing-wave spectrometry in silicon nano-waveguides using reflection-based near-field scanning optical microscopy

Yi-Zhi Sun(孙一之), Wei Ding(丁伟), Bin-Bin Wang(王斌斌), Rafael Salas-Montiel, Sylvain Blaize, Renaud Bachelot, Zhong-Wei Fan(樊仲维), Li-Shuang Feng(冯丽爽)   

  1. 1 School of Instrumentation Science and Opto-Electronics Engineering, Beihang University, Beijing 100191, China;
    2 Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Laboratoire de Nanotechnologie et d'Instrumentation Optique(LNIO), ICD CNRS UMR 6281, Université de Technologie de Troyes, France;
    4 Academy of Opto-Electronics, Chinese Academy of Science, Beijing 100094, China
  • 收稿日期:2018-11-06 修回日期:2018-11-15 出版日期:2019-01-05 发布日期:2019-01-05
  • 通讯作者: Wei Ding, Li-Shuang Feng E-mail:fenglishuang@buaa.edu.cn;wding@iphy.ac.cn
  • 基金资助:

    Project supported by National Key R&D Program of China (Grant No. 2017YFA0303800), National Natural Science Foundation of China (Grant No. 61575218), and Defense Industrial Technology Development Program, China (Grant No. JCKY201601C006).

Standing-wave spectrometry in silicon nano-waveguides using reflection-based near-field scanning optical microscopy

Yi-Zhi Sun(孙一之)1,2, Wei Ding(丁伟)2, Bin-Bin Wang(王斌斌)3, Rafael Salas-Montiel3, Sylvain Blaize3, Renaud Bachelot3, Zhong-Wei Fan(樊仲维)4, Li-Shuang Feng(冯丽爽)1   

  1. 1 School of Instrumentation Science and Opto-Electronics Engineering, Beihang University, Beijing 100191, China;
    2 Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Laboratoire de Nanotechnologie et d'Instrumentation Optique(LNIO), ICD CNRS UMR 6281, Université de Technologie de Troyes, France;
    4 Academy of Opto-Electronics, Chinese Academy of Science, Beijing 100094, China
  • Received:2018-11-06 Revised:2018-11-15 Online:2019-01-05 Published:2019-01-05
  • Contact: Wei Ding, Li-Shuang Feng E-mail:fenglishuang@buaa.edu.cn;wding@iphy.ac.cn
  • Supported by:

    Project supported by National Key R&D Program of China (Grant No. 2017YFA0303800), National Natural Science Foundation of China (Grant No. 61575218), and Defense Industrial Technology Development Program, China (Grant No. JCKY201601C006).

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摘要：

Utilizing reflection-based near-field scanning optical microscopy (NSOM) to image and analyze standing-wave patterns, we present a characterization technique potentially suitable for complex photonic integrated circuits. By raster scanning along the axis of a straight nano-waveguide in tapping mode and sweeping wavelength, detailed information of propagating waves in that waveguide has been extracted from analyses in both space and wavelength domains. Our technique needs no special steps for phase stabilization, thus allowing long-duration and environment-insensitive measurements. As a proof-of-concept test, in a silicon single-mode waveguide with a few of etched holes, the locations and reflection strengths of the inner defects have been quantified. The measurement uncertainty of the reflection amplitude is less than 25% at current stage. Our technique paves the way for non-destructively diagnosing photonic circuits on a chip with sub-wavelength spatial resolution and detailed information extraction.

关键词: near-field scanning optical microscopes, integrated optics, interferometry

Abstract:

Utilizing reflection-based near-field scanning optical microscopy (NSOM) to image and analyze standing-wave patterns, we present a characterization technique potentially suitable for complex photonic integrated circuits. By raster scanning along the axis of a straight nano-waveguide in tapping mode and sweeping wavelength, detailed information of propagating waves in that waveguide has been extracted from analyses in both space and wavelength domains. Our technique needs no special steps for phase stabilization, thus allowing long-duration and environment-insensitive measurements. As a proof-of-concept test, in a silicon single-mode waveguide with a few of etched holes, the locations and reflection strengths of the inner defects have been quantified. The measurement uncertainty of the reflection amplitude is less than 25% at current stage. Our technique paves the way for non-destructively diagnosing photonic circuits on a chip with sub-wavelength spatial resolution and detailed information extraction.

Key words: near-field scanning optical microscopes, integrated optics, interferometry

中图分类号:  (Near-field scanning optical microscopes)

  • 07.79.Fc
42.82.-m (Integrated optics) 95.75.Kk (Interferometry)