Pressure effect in the Kondo semimetal CeRu4Sn6 with nontrivial topology

doi:10.1088/1674-1056/27/9/097103

中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97103-097103.doi: 10.1088/1674-1056/27/9/097103

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Pressure effect in the Kondo semimetal CeRu₄Sn₆ with nontrivial topology

Jiahao Zhang(张佳浩), Shuai Zhang(张帅), Ziheng Chen(陈子珩), Meng Lv(吕孟), Hengcan Zhao(赵恒灿), Yi-feng Yang(杨义峰), Genfu Chen(陈根富), Peijie Sun(孙培杰)

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-05-25 修回日期:2018-06-19 出版日期:2018-09-05 发布日期:2018-09-05
通讯作者: Peijie Sun E-mail:pjsun@iphy.ac.cn
基金资助:
Project supported by the Ministry of Science and Technology of China (Grant Nos. 2015CB921303 and 2017YFA0303103), the National Natural Science Foundation of China (Grant Nos. 11474332 and 11774404), and the Chinese Academy of Sciences through the Strategic Priority Research Program (Grant No. XDB07020200).

Pressure effect in the Kondo semimetal CeRu₄Sn₆ with nontrivial topology

Jiahao Zhang(张佳浩)^1,2, Shuai Zhang(张帅)¹, Ziheng Chen(陈子珩)², Meng Lv(吕孟)^1,2, Hengcan Zhao(赵恒灿)^1,2, Yi-feng Yang(杨义峰)¹, Genfu Chen(陈根富)¹, Peijie Sun(孙培杰)¹

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-05-25 Revised:2018-06-19 Online:2018-09-05 Published:2018-09-05
Contact: Peijie Sun E-mail:pjsun@iphy.ac.cn
Supported by:
Project supported by the Ministry of Science and Technology of China (Grant Nos. 2015CB921303 and 2017YFA0303103), the National Natural Science Foundation of China (Grant Nos. 11474332 and 11774404), and the Chinese Academy of Sciences through the Strategic Priority Research Program (Grant No. XDB07020200).

摘要/Abstract

摘要：

Kondo semimetal CeRu₄Sn₆ is attracting renewed attention due to the theoretically predicted nontrivial topology in its electronic band structure. We report hydrostatic and chemical pressure effects on the transport properties of single-and poly-crystalline samples. The electrical resistivity ρ(T) is gradually enhanced by applying pressure over a wide temperature range from room temperature down to 25 mK. Two thermal activation gaps estimated from high-and low-temperature windows are found to increase with pressure. A flat ρ(T) observed at the lowest temperatures below 300 mK appears to be robust against both pressure and field. This feature as well as the increase of the energy gaps calls for more intensive investigations with respect to electron correlations and band topology.

关键词: CeRu₄Sn₆, Weyl semimetal, heavy fermion, hydrostatic pressure

Abstract:

Key words: CeRu₄Sn₆, Weyl semimetal, heavy fermion, hydrostatic pressure

中图分类号: (Strongly correlated electron systems; heavy fermions)

71.27.+a

75.30.Mb (Valence fluctuation, Kondo lattice, and heavy-fermion phenomena) 72.15.-v (Electronic conduction in metals and alloys)

张佳浩, 张帅, 陈子珩, 吕孟, 赵恒灿, 杨义峰, 陈根富, 孙培杰. Pressure effect in the Kondo semimetal CeRu₄Sn₆ with nontrivial topology[J]. 中国物理B, 2018, 27(9): 97103-097103.

Jiahao Zhang(张佳浩), Shuai Zhang(张帅), Ziheng Chen(陈子珩), Meng Lv(吕孟), Hengcan Zhao(赵恒灿), Yi-feng Yang(杨义峰), Genfu Chen(陈根富), Peijie Sun(孙培杰). Pressure effect in the Kondo semimetal CeRu₄Sn₆ with nontrivial topology[J]. Chin. Phys. B, 2018, 27(9): 97103-097103.

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Pressure effect in the Kondo semimetal CeRu₄Sn₆ with nontrivial topology

Pressure effect in the Kondo semimetal CeRu₄Sn₆ with nontrivial topology

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