中国物理B ›› 2018, Vol. 27 ›› Issue (4): 48101-048101.doi: 10.1088/1674-1056/27/4/048101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effects of growth conditions on optical quality and surface morphology of InGaAsBi

Jia-Kai Li(李家恺), Li-Kun Ai(艾立鹍), Ming Qi(齐鸣), An-Hui Xu(徐安怀), Shu-Min Wang(王庶民)   

  1. 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden;
    3. University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-11-01 修回日期:2017-12-26 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Shu-Min Wang E-mail:shumin@mail.sim.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61434006) and the National Basic Research Program of China (Grant No. 2014CB643902).

Effects of growth conditions on optical quality and surface morphology of InGaAsBi

Jia-Kai Li(李家恺)1,3, Li-Kun Ai(艾立鹍)1, Ming Qi(齐鸣)1, An-Hui Xu(徐安怀)1, Shu-Min Wang(王庶民)1,2   

  1. 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden;
    3. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-11-01 Revised:2017-12-26 Online:2018-04-05 Published:2018-04-05
  • Contact: Shu-Min Wang E-mail:shumin@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61434006) and the National Basic Research Program of China (Grant No. 2014CB643902).

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摘要： The effects of Bi flux and pressure of AsH3 on Bi incorporation, surface morphology and optical properties of InGaAsBi grown by gas source molecular beam epitaxy are studied. It is found that using relatively low pressure of AsH3 and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value. The result from Rutherford backscattering spectroscopy (RBS) confirms that the Bi incorporation can increase up to 1.13%. By adjusting Bi and As flux, we could improve the surface morphology of InGaAsBi sample. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InGaAs bandgap.

关键词: compound semiconductor, gas source molecular beam epitaxy, bismide

Abstract: The effects of Bi flux and pressure of AsH3 on Bi incorporation, surface morphology and optical properties of InGaAsBi grown by gas source molecular beam epitaxy are studied. It is found that using relatively low pressure of AsH3 and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value. The result from Rutherford backscattering spectroscopy (RBS) confirms that the Bi incorporation can increase up to 1.13%. By adjusting Bi and As flux, we could improve the surface morphology of InGaAsBi sample. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InGaAs bandgap.

Key words: compound semiconductor, gas source molecular beam epitaxy, bismide

中图分类号:  (III-V semiconductors)

  • 81.05.Ea