中国物理B ›› 2016, Vol. 25 ›› Issue (7): 78104-078104.doi: 10.1088/1674-1056/25/7/078104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Perfect spin filtering controlled by an electric field in a bilayer graphene junction: Effect of layer-dependent exchange energy

Kitakorn Jatiyanon, I-Ming Tang, Bumned Soodchomshom   

  1. 1 Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand;
    2 Department of Materials Science, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
  • 收稿日期:2016-01-11 修回日期:2016-02-26 出版日期:2016-07-05 发布日期:2016-07-05
  • 通讯作者: Bumned Soodchomshom E-mail:Bumned@hotmail.com,fscibns@ku.ac.th
  • 基金资助:
    Project supported by the Kasetsart University Research and Development Institute (KURDI) and Thailand Research Fund (TRF) (Grant No. TRG5780274).

Perfect spin filtering controlled by an electric field in a bilayer graphene junction: Effect of layer-dependent exchange energy

Kitakorn Jatiyanon1, I-Ming Tang2, Bumned Soodchomshom1   

  1. 1 Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand;
    2 Department of Materials Science, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
  • Received:2016-01-11 Revised:2016-02-26 Online:2016-07-05 Published:2016-07-05
  • Contact: Bumned Soodchomshom E-mail:Bumned@hotmail.com,fscibns@ku.ac.th
  • Supported by:
    Project supported by the Kasetsart University Research and Development Institute (KURDI) and Thailand Research Fund (TRF) (Grant No. TRG5780274).

摘要: Magneto transport of carriers with a spin-dependent gap in a ferromagnetic-gated bilayer of graphene is investigated. We focus on the effect of an energy gap induced by the mismatch of the exchange fields in the top and bottom layers of an AB-stacked graphene bilayer. The interplay of the electric and exchange fields causes the electron to acquire a spin-dependent energy gap. We find that, only in the case of the anti-parallel configuration, the effect of a magnetic-induced gap will give rise to perfect spin filtering controlled by the electric field. The resolution of the spin filter may be enhanced by varying the bias voltage. Perfect switching of the spin polarization from +100% to -100% by reversing the direction of electric field is predicted. Giant magnetoresistance is predicted to be easily realized when the applied electric field is smaller than the magnetic energy gap. It should be pointed out that the perfect spin filter is due to the layer-dependent exchange energy. This work points to the potential application of bilayer graphene in spintronics.

关键词: bilayer graphene, spin filter, magnetoresistance, spintronics

Abstract: Magneto transport of carriers with a spin-dependent gap in a ferromagnetic-gated bilayer of graphene is investigated. We focus on the effect of an energy gap induced by the mismatch of the exchange fields in the top and bottom layers of an AB-stacked graphene bilayer. The interplay of the electric and exchange fields causes the electron to acquire a spin-dependent energy gap. We find that, only in the case of the anti-parallel configuration, the effect of a magnetic-induced gap will give rise to perfect spin filtering controlled by the electric field. The resolution of the spin filter may be enhanced by varying the bias voltage. Perfect switching of the spin polarization from +100% to -100% by reversing the direction of electric field is predicted. Giant magnetoresistance is predicted to be easily realized when the applied electric field is smaller than the magnetic energy gap. It should be pointed out that the perfect spin filter is due to the layer-dependent exchange energy. This work points to the potential application of bilayer graphene in spintronics.

Key words: bilayer graphene, spin filter, magnetoresistance, spintronics

中图分类号:  (Graphene)

  • 81.05.ue
72.80.Vp (Electronic transport in graphene) 72.25.-b (Spin polarized transport) 73.43.Qt (Magnetoresistance)