中国物理B ›› 2016, Vol. 25 ›› Issue (6): 68403-068403.doi: 10.1088/1674-1056/25/6/068403
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition
Da-Ming Chen(陈大明), Yuan-Xun Li(李元勋), Li-Kun Han(韩莉坤), Chao Long(龙超), Huai-Wu Zhang(张怀武)
- 1 College of Materials and Chemical Engineering, Hainan University, Haikou 570228, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition
Da-Ming Chen(陈大明)1,2, Yuan-Xun Li(李元勋)2, Li-Kun Han(韩莉坤)2, Chao Long(龙超)2, Huai-Wu Zhang(张怀武)2
- 1 College of Materials and Chemical Engineering, Hainan University, Haikou 570228, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
摘要：
Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910℃ and oxygen pressure is 300 mTorr (1 Torr=1.3332×102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (Mr/Ms) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs=104 T), and the anisotropy field is 16.5 kOe (1 Oe=79.5775 A·m-1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices.
中图分类号: (Radiowave and microwave (including millimeter wave) technology)
- 84.40.-x