Study on electrical defects level in single layer two-dimensional Ta2O5

doi:10.1088/1674-1056/25/4/047304

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/25/4/047304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Study on electrical defects level in single layer two-dimensional Ta₂O₅

Dahai Li(李大海), Xiongfei Song(宋雄飞), Linfeng Hu(胡林峰), Ziyi Wang(王子仪), Rongjun Zhang(张荣君), Liangyao Chen(陈良尧), David Wei Zhang(张卫), Peng Zhou(周鹏)

1 Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China;
2 ASIC & System State Key Laboratory, School of Microelectronics, Fudan University, Shanghai 200433, China;
3 Department of Materials Science and Engineering, Fudan University, Shanghai 200433, China

收稿日期:2015-07-30 修回日期:2016-01-11 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Rongjun Zhang, Peng Zhou E-mail:rjzhang@fudan.edu.cn;pengzhou@fudan.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174058 and 61376093), the Fund from Shanghai Municipal Science and Technology Commission (Grant No. 13QA1400400), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 12ZZ010).

Study on electrical defects level in single layer two-dimensional Ta₂O₅

Dahai Li(李大海)¹, Xiongfei Song(宋雄飞)², Linfeng Hu(胡林峰)³, Ziyi Wang(王子仪)¹, Rongjun Zhang(张荣君)¹, Liangyao Chen(陈良尧)¹, David Wei Zhang(张卫)², Peng Zhou(周鹏)²

1 Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China;
2 ASIC & System State Key Laboratory, School of Microelectronics, Fudan University, Shanghai 200433, China;
3 Department of Materials Science and Engineering, Fudan University, Shanghai 200433, China

Received:2015-07-30 Revised:2016-01-11 Online:2016-04-05 Published:2016-04-05
Contact: Rongjun Zhang, Peng Zhou E-mail:rjzhang@fudan.edu.cn;pengzhou@fudan.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174058 and 61376093), the Fund from Shanghai Municipal Science and Technology Commission (Grant No. 13QA1400400), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 12ZZ010).

摘要/Abstract

摘要：

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta₂O₅ used as gate dielectric in field-effect transistors is obtained via assemblies of Ta₂O₅ nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta₂O₅. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta₂O₅, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta₂O₅.

关键词: single layer, electronic defects, spectroscopic ellipsometry

Abstract:

Key words: single layer, electronic defects, spectroscopic ellipsometry

中图分类号: (Surface double layers, Schottky barriers, and work functions)

73.30.+y

73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

李大海, 宋雄飞, 胡林峰, 王子仪, 张荣君, 陈良尧, 张卫, 周鹏. Study on electrical defects level in single layer two-dimensional Ta₂O₅[J]. 中国物理B, 2016, 25(4): 47304-047304.

Dahai Li(李大海), Xiongfei Song(宋雄飞), Linfeng Hu(胡林峰), Ziyi Wang(王子仪), Rongjun Zhang(张荣君), Liangyao Chen(陈良尧), David Wei Zhang(张卫), Peng Zhou(周鹏). Study on electrical defects level in single layer two-dimensional Ta₂O₅[J]. Chin. Phys. B, 2016, 25(4): 47304-047304.

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Study on electrical defects level in single layer two-dimensional Ta₂O₅

Study on electrical defects level in single layer two-dimensional Ta₂O₅

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