中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/25/2/027201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling

Nai-Qing Liu(刘乃清), Li-Jie Huang(黄立捷), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾)   

  1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2015-07-29 修回日期:2015-10-11 出版日期:2016-02-05 发布日期:2016-02-05
  • 通讯作者: Liang-Bin Hu E-mail:lbhu26@yahoo.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11474106).

Current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling

Nai-Qing Liu(刘乃清), Li-Jie Huang(黄立捷), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾)   

  1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China
  • Received:2015-07-29 Revised:2015-10-11 Online:2016-02-05 Published:2016-02-05
  • Contact: Liang-Bin Hu E-mail:lbhu26@yahoo.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11474106).

摘要: We have studied the characteristics of current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling. It was found that within some parameter regions the magnitude of the current induced nonequilibrium spin polarization density in such structures will increase (or decrease) with the decrease (or increase) of the charge current density, in contrast to that found in normal spin-orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.

关键词: semiconductor/superconductor junctions, spin-orbit coupling, Andreev reflection, current induced spin polarization

Abstract: We have studied the characteristics of current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling. It was found that within some parameter regions the magnitude of the current induced nonequilibrium spin polarization density in such structures will increase (or decrease) with the decrease (or increase) of the charge current density, in contrast to that found in normal spin-orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.

Key words: semiconductor/superconductor junctions, spin-orbit coupling, Andreev reflection, current induced spin polarization

中图分类号:  (Theory of electronic transport; scattering mechanisms)

  • 72.10.-d
72.20.-i (Conductivity phenomena in semiconductors and insulators) 73.50.Jt (Galvanomagnetic and other magnetotransport effects)