Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

doi:10.1088/1674-1056/25/11/117302

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117302-117302.doi: 10.1088/1674-1056/25/11/117302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

M Munguía-Rodríguez, Ri Betancourt-Riera, Re Betancourt-Riera, R Riera, J M Nieto Jalil

1 Departamento de Investigación en Física, Universidad de Sonora, Apartado Postal 5-88, 83190, Hermosillo, Sonora, México;
2 Instituto Tecnólogico de Hermosillo. Avenida Tecnol ógico S/N, Col. Sahuaro, 83170, Hermosillo, Sonora, México;
3 Tecnológico de Monterrey-Campus Sonora Norte. Bulevar Enrique Mazón López No.965, 83000, Hermosillo, Sonora, México

收稿日期:2016-06-02 修回日期:2016-07-20 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Re Betancourt-Riera E-mail:rbriera@gmail.com

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

M Munguía-Rodríguez¹, Ri Betancourt-Riera², Re Betancourt-Riera², R Riera¹, J M Nieto Jalil³

1 Departamento de Investigación en Física, Universidad de Sonora, Apartado Postal 5-88, 83190, Hermosillo, Sonora, México;
2 Instituto Tecnólogico de Hermosillo. Avenida Tecnol ógico S/N, Col. Sahuaro, 83170, Hermosillo, Sonora, México;
3 Tecnológico de Monterrey-Campus Sonora Norte. Bulevar Enrique Mazón López No.965, 83000, Hermosillo, Sonora, México

Received:2016-06-02 Revised:2016-07-20 Online:2016-11-05 Published:2016-11-05
Contact: Re Betancourt-Riera E-mail:rbriera@gmail.com

摘要/Abstract

摘要： The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T=0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.

关键词: electron states, Raman scattering, selection rules, quantum well wires

Abstract: The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T=0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.

Key words: electron states, Raman scattering, selection rules, quantum well wires

中图分类号: (Quantum wires)

73.21.Hb

78.67.Lt (Quantum wires)

M Munguía-Rodríguez, Ri Betancourt-Riera, Re Betancourt-Riera, R Riera, J M Nieto Jalil. Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire[J]. 中国物理B, 2016, 25(11): 117302-117302.

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Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

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