Electronic structure of silicene

doi:10.1088/1674-1056/24/8/087309

摘要/Abstract

摘要：

In this topical review, we discuss the electronic structure of free-standing silicene by comparing results obtained using different theoretical methods. Silicene is a single atomic layer of silicon similar to graphene. The interest in silicene is the same as for graphene, in being two-dimensional and possessing a Dirac cone. One advantage of silicene is due to its compatibility with current silicon electronics. Both empirical and first-principles techniques have been used to study the electronic properties of silicene. We will provide a brief overview of the parameter space for first-principles calculations. However, since the theory is standard, no extensive discussion will be included. Instead, we will emphasize what empirical methods can provide to such investigations and the current state of these theories. Finally, we will review the properties computed using both types of theories for free-standing silicene, with emphasis on areas where we have contributed. Comparisons to graphene is provided throughout.

关键词: silicene, two-dimensional (2D) materials, electronic structure, k·, p theory

Abstract:

Key words: silicene, two-dimensional (2D) materials, electronic structure, k·, p theory

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

73.22.Pr (Electronic structure of graphene)

刘祿昌. Electronic structure of silicene[J]. 中国物理B, 2015, 24(8): 87309-087309.

L. C. Lew Yan Voon (刘祿昌). Electronic structure of silicene[J]. Chin. Phys. B, 2015, 24(8): 87309-087309.

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