Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

doi:10.1088/1674-1056/24/7/077502

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77502-077502.doi: 10.1088/1674-1056/24/7/077502

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Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

胡泊, 何为, 叶军, 汤进, 张永圣, Syed Sheraz Ahmad, 张向群, 成昭华

State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2015-03-19 修回日期:2015-04-14 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921403, 2011CB921801, and 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 51427801, 11374350, and 11274361).

Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

Hu Bo (胡泊), He Wei (何为), Ye Jun (叶军), Tang Jin (汤进), Zhang Yong-Sheng (张永圣), Syed Sheraz Ahmad, Zhang Xiang-Qun (张向群), Cheng Zhao-Hua (成昭华)

State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2015-03-19 Revised:2015-04-14 Online:2015-07-05 Published:2015-07-05
Contact: Cheng Zhao-Hua E-mail:zhcheng@aphy.iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921403, 2011CB921801, and 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 51427801, 11374350, and 11274361).

摘要/Abstract

摘要： Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO (001) films is investigated by magnetoresistance measurements. When the temperature decreases from 300 K to 80 K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K₁, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant K_U are responsible for this transformation. The strengths of K₁ and domain wall pinning energy increase with decreasing temperature, but K_U remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90° domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO(001) films at different temperatures.

关键词: multi-jump magnetic switching process, magnetoresistance, domain wall

Abstract: Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO (001) films is investigated by magnetoresistance measurements. When the temperature decreases from 300 K to 80 K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K₁, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant K_U are responsible for this transformation. The strengths of K₁ and domain wall pinning energy increase with decreasing temperature, but K_U remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90° domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO(001) films at different temperatures.

Key words: multi-jump magnetic switching process, magnetoresistance, domain wall

中图分类号: (Magnetic anisotropy)

75.30.Gw

75.60.Jk (Magnetization reversal mechanisms) 75.60.Ch (Domain walls and domain structure)

胡泊, 何为, 叶军, 汤进, 张永圣, Syed Sheraz Ahmad, 张向群, 成昭华. Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films[J]. 中国物理B, 2015, 24(7): 77502-077502.

Hu Bo (胡泊), He Wei (何为), Ye Jun (叶军), Tang Jin (汤进), Zhang Yong-Sheng (张永圣), Syed Sheraz Ahmad, Zhang Xiang-Qun (张向群), Cheng Zhao-Hua (成昭华). Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films[J]. Chin. Phys. B, 2015, 24(7): 77502-077502.

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Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

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