›› 2014, Vol. 23 ›› Issue (8): 88113-088113.doi: 10.1088/1674-1056/23/8/088113

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Modeling for V-O2 reactive sputtering process using a pulsed power supply

王涛a, 于贺a, 董翔a, 蒋亚东a, 陈超a, 胡锐麟b   

  1. a School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
    b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL, 61801, USA
  • 收稿日期:2014-01-01 修回日期:2014-03-13 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project partially supported by the National Natural Science Foundation of China (Grant Nos. 61071032, 61377063, and 61235006).

Modeling for V-O2 reactive sputtering process using a pulsed power supply

Wang Tao (王涛)a, Yu He (于贺)a, Dong Xiang (董翔)a, Jiang Ya-Dong (蒋亚东)a, Chen Chao (陈超)a, Wu Ro-Land (胡锐麟)b   

  1. a School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
    b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL, 61801, USA
  • Received:2014-01-01 Revised:2014-03-13 Online:2014-08-15 Published:2014-08-15
  • Contact: Wang Tao E-mail:wtwh@uestc.edu.cn
  • Supported by:
    Project partially supported by the National Natural Science Foundation of China (Grant Nos. 61071032, 61377063, and 61235006).

PDF (PC)

373

赞

摘要： In this article, we present a time-dependent model that enables us to describe the dynamic behavior of pulsed DC reactive sputtering and predict the film compositions of VOx prepared by this process. In this modeling, the average current J is replaced by a new parameter of Jeff. Meanwhile, the four species states of V, V2O3, VO2, and V2O5 in the vanadium oxide films are taken into consideration. Based on this work, the influences of the oxygen gas supply and the pulsed power parameters including the duty cycle and frequency on film compositions are discussed. The model suggests that the time to reach process equilibrium may vary substantially depending on these parameters. It is also indicated that the compositions of VOx films are quite sensitive to both the reactive gas supply and the duty cycle when the power supply works in pulse mode. The‘steady-state’balance values obtained by these simulations show excellent agreement with the experimental data, which indicates that the experimentally obtained dynamic behavior of the film composition can be explained by this time-dependent modeling for pulsed DC reactive sputtering process. Moreover, the computer simulation results indicate that the curves will essentially yield oscillations around the average value of the film compositions with lower pulse frequency.

关键词: time-dependent model, pulsed DC reactive sputtering, film composition, duty cycle

Abstract: In this article, we present a time-dependent model that enables us to describe the dynamic behavior of pulsed DC reactive sputtering and predict the film compositions of VOx prepared by this process. In this modeling, the average current J is replaced by a new parameter of Jeff. Meanwhile, the four species states of V, V2O3, VO2, and V2O5 in the vanadium oxide films are taken into consideration. Based on this work, the influences of the oxygen gas supply and the pulsed power parameters including the duty cycle and frequency on film compositions are discussed. The model suggests that the time to reach process equilibrium may vary substantially depending on these parameters. It is also indicated that the compositions of VOx films are quite sensitive to both the reactive gas supply and the duty cycle when the power supply works in pulse mode. The‘steady-state’balance values obtained by these simulations show excellent agreement with the experimental data, which indicates that the experimentally obtained dynamic behavior of the film composition can be explained by this time-dependent modeling for pulsed DC reactive sputtering process. Moreover, the computer simulation results indicate that the curves will essentially yield oscillations around the average value of the film compositions with lower pulse frequency.

Key words: time-dependent model, pulsed DC reactive sputtering, film composition, duty cycle

中图分类号:  (Deposition by sputtering)

  • 81.15.Cd