›› 2014, Vol. 23 ›› Issue (8): 87102-087102.doi: 10.1088/1674-1056/23/8/087102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Theory of phonon-modulated electron spin relaxation time based on the projection–reduction method

Nam Lyong Kanga, Sang Don Choib   

  1. a Department of Applied Nanoscience, Pusan National University, Miryang 627-706, Republic of Korea;
    b Department of Physics, Kyungpook National University, Daegu 702-701, Republic of Korea
  • 收稿日期:2014-01-10 修回日期:2014-02-20 出版日期:2014-08-15 发布日期:2014-08-15

Theory of phonon-modulated electron spin relaxation time based on the projection–reduction method

Nam Lyong Kanga, Sang Don Choib   

  1. a Department of Applied Nanoscience, Pusan National University, Miryang 627-706, Republic of Korea;
    b Department of Physics, Kyungpook National University, Daegu 702-701, Republic of Korea
  • Received:2014-01-10 Revised:2014-02-20 Online:2014-08-15 Published:2014-08-15
  • Contact: Nam Lyong Kang E-mail:nlkang@pusan.ac.kr

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摘要： This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling using the projection-reduction method. The phonon absorption and emission processes as well as the photon absorption and emission processes in all electron transition processes can be explained in an organized manner, and the result can be represented in a diagram that can provide intuition for the quantum dynamics of electrons in a solid. The temperature (T) dependence of electron spin relaxation times (T1) in silicon is T1∝ T-1.07 at low temperatures and T1∝ T-3.3 at high temperatures for acoustic deformation constant Pad=1.4× 107 eV and optical deformation constant Pod=4.0×1017 eV/m. This means that electrons are scattered by the acoustic deformation phonons at low temperatures and optical deformation phonons at high temperatures, respectively. The magnetic field (B) dependence of the relaxation times is T1∝ B-2.7 at 100 K and T1∝ B-2.3 at 150 K, which nearly agree with the result of Yafet, T1∝ B-3.0～ B-2.5.

关键词: electron spin resonance, spin-orbit coupling, projection-reduction method, phonon scattering

Abstract: This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling using the projection-reduction method. The phonon absorption and emission processes as well as the photon absorption and emission processes in all electron transition processes can be explained in an organized manner, and the result can be represented in a diagram that can provide intuition for the quantum dynamics of electrons in a solid. The temperature (T) dependence of electron spin relaxation times (T1) in silicon is T1∝ T-1.07 at low temperatures and T1∝ T-3.3 at high temperatures for acoustic deformation constant Pad=1.4× 107 eV and optical deformation constant Pod=4.0×1017 eV/m. This means that electrons are scattered by the acoustic deformation phonons at low temperatures and optical deformation phonons at high temperatures, respectively. The magnetic field (B) dependence of the relaxation times is T1∝ B-2.7 at 100 K and T1∝ B-2.3 at 150 K, which nearly agree with the result of Yafet, T1∝ B-3.0～ B-2.5.

Key words: electron spin resonance, spin-orbit coupling, projection-reduction method, phonon scattering

中图分类号:  (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

  • 71.70.Ej
72.25.Rb (Spin relaxation and scattering) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)