Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

doi:10.1088/1674-1056/23/3/037201

中国物理B ›› 2014, Vol. 23 ›› Issue (3): 37201-037201.doi: 10.1088/1674-1056/23/3/037201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

杨杭生^a, 金盼盼^a, 徐亚伯^b, 李海洋^b

a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
b Department of Physics, Zhejiang University, Hangzhou 310027, China

收稿日期:2013-05-07 修回日期:2013-08-21 出版日期:2014-03-15 发布日期:2014-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 50772096 and 61176051).

Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

Yang Hang-Sheng (杨杭生)^a, Jin Pan-Pan (金盼盼)^a, Xu Ya-Bo (徐亚伯)^b, Li Hai-Yang (李海洋)^b

a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
b Department of Physics, Zhejiang University, Hangzhou 310027, China

Received:2013-05-07 Revised:2013-08-21 Online:2014-03-15 Published:2014-03-15
Contact: Yang Hang-Sheng E-mail:hsyang@zju.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 50772096 and 61176051).

摘要/Abstract

摘要： Theoretical and experimental investigations on the dependence of the intensity of infrared (IR) absorption of polycrystalline cubic boron nitride thin films under the residual compressive stress conditions have been performed. Our results indicate that the intensity of the IR absorption is proportional to the total degree of freedom of all the ions in the ordered regions. The reduction of interstitial Ar atom concentration, which causes the increase in the ordered regions of cubic boron nitride (cBN) crystallites, could be one cause for the increase in the intensity of IR absorption after residual compressive stress relaxation. Theoretical derivation is in good agreement with the experimental results concerning the IR absorption intensity and the Ar interstitial atom concentration in cubic boron nitride films measured by energy dispersion X-ray spectroscopy. Our results also suggest that the interstitial Ar is the origin of residual compressive stress accumulation in plasma enhanced cBN film deposition.

关键词: infrared absorption, compressive stress, degree of freedom, interstitial atom

Abstract: Theoretical and experimental investigations on the dependence of the intensity of infrared (IR) absorption of polycrystalline cubic boron nitride thin films under the residual compressive stress conditions have been performed. Our results indicate that the intensity of the IR absorption is proportional to the total degree of freedom of all the ions in the ordered regions. The reduction of interstitial Ar atom concentration, which causes the increase in the ordered regions of cubic boron nitride (cBN) crystallites, could be one cause for the increase in the intensity of IR absorption after residual compressive stress relaxation. Theoretical derivation is in good agreement with the experimental results concerning the IR absorption intensity and the Ar interstitial atom concentration in cubic boron nitride films measured by energy dispersion X-ray spectroscopy. Our results also suggest that the interstitial Ar is the origin of residual compressive stress accumulation in plasma enhanced cBN film deposition.

Key words: infrared absorption, compressive stress, degree of freedom, interstitial atom

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

杨杭生, 金盼盼, 徐亚伯, 李海洋. Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition[J]. 中国物理B, 2014, 23(3): 37201-037201.

Yang Hang-Sheng (杨杭生), Jin Pan-Pan (金盼盼), Xu Ya-Bo (徐亚伯), Li Hai-Yang (李海洋). Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition[J]. Chin. Phys. B, 2014, 23(3): 37201-037201.

参考文献 30

[1]	Turrell G 1972 Infrared and Raman Spectra of Crystals (London: Academic Press)
[2]	Brodsky M H 1982 Light Scattering in Solids I, Topics in Applied Physics (Cardona M and Guntherodt G ed.) (vol. 8) (Berlin: Springer) p. 205
[3]	Mirkarimi P B, McCarty K F and Medlin D L 1997 Mater. Sci. Eng. R: Rep. 21 47
[4]	Yoshida T 1996 Diam. Relat. Mater. 5 501
[5]	Samantaray C B and Singh R N 2005 Int. Mater. Rev. 50 313
[6]	Yang H S, Nie A M and Zhang J Y 2009 Acta Phys. Sin. 58 1364 (in Chinese)
[7]	Tian L, Ding Y, Chen H, Liu J K, Deng J X, He D Y and Chen G H 2006 Acta Phys. Sin. 55 5441 (in Chinese)
[8]	Friedmann T A, Mirkarimi P B, Medlin D L, McCarty K F, Klaus E J, Boehme D, Johnsen H A, Mills M J and Ottersen D K 1994 J. Appl. Phys. 76 3088
[9]	Jaeger S, Bewilogue K and Klages C P 1994 Thin Solid Films 245 50
[10]	Tsuda O, Yamada Y, Fujii T and Yoshida T 1995 J. Vac. Sci. Technol. A 13 2843
[11]	Yang H S, Zhang Y, Zhang X B and Xu Y B 2007 Appl. Phys. Lett. 91 061907
[12]	Yang H S, Zhang J Y, Nie A M and Zhang X B 2008 Chin. Phys. B 17 3453
[13]	Yang H S, Chen A L and Qiu F M 2011 Diam. Relat. Mater. 20 1179
[14]	Fahy S 1995 Phys. Rev. B 51 12873
[15]	Cardona M and Anastassakis E 1996 Phys. Rev. B 54 14888
[16]	Kern G, Kresse G and Hafner J 1999 Phys. Rev. B 59 8551
[17]	Liu Y, Jin P P, Chen A L, Yang H S and Xu Y B 2012 J. Appl. Phys. 112 053502
[18]	Yang H S, Iwamoto C and Yoshida T 2002 Thin Solid Films 407 67
[19]	Yang H S, Iwamoto C and Yoshida T 2007 Diam. Relat. Mater. 16 642
[20]	Yang H S, Iwamoto C and Yoshida T 2003 J. Appl. Phys. 94 1248
[21]	Callaway J 1991 Quantum Theory of the Solid State (London: Academic Press)
[22]	Zhang X W, Boyen H G, Deyneka N, Ziemann P, Banhart F and Schreck M 2003 Nat. Mater. 2 312
[23]	Matsumoto S and Zhang W 2000 Jpn. J. Appl. Phys. 39 L442
[24]	Zhang W J, Bello I, Lifshitz Y, Chan K M, Meng X, Wu Y, Chan C Y and Lee S T 2004 Adv. Mater. 16 1405
[25]	Reinke S, Kuhr M and Kulisch W 1996 Diam. Relat. Mater. 5 508
[26]	Reinke S and Kulisch W 1997 Surf. Coat. Technol. 97 23
[27]	Teii K, Yamao R, Tamamura T and Matsumoto S 2007 J. Appl. Phys. 101 033301
[28]	Teii K and Matsumoto S 2012 ACS Appl. Mater. Interf. 4 5249
[29]	Deyneka N, Zhang X W, Boyen H G, Ziemann P, Fukarek W, Kruse O and Möller W 2003 Diam. Relat. Mater. 12 37
[30]	Plass M F, Fukarek W, Kolitsch A, Schnell N, Möller W 1997 Thin Solid Films 305 172

Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 30

相关文章 13

Metrics

本文评价

推荐阅读 0

[1]	Hao Yu(于昊), Ying Xie(谢颖), Jiahui Wei(魏佳辉), Peiqing Zhang(张培晴),Zhiying Cui(崔志英), and Haohai Yu(于浩海). Resonant perfect absorption of molybdenum disulfide beyond the bandgap[J]. 中国物理B, 2023, 32(4): 48101-048101.
[2]	Lihong Shi(史丽弘) and Jiebin Peng(彭洁彬). Tuning infrared absorption in hyperbolic polaritons coated silk fibril composite[J]. 中国物理B, 2022, 31(11): 114401-114401.
[3]	王恩栋, 朱倍恩, 高嶷. Discontinuous transition between Zundel and Eigen for H₅O₂⁺[J]. 中国物理B, 2020, 29(8): 83101-083101.
[4]	杨汝雨, 张中义, 徐林林, 李爽, 焦扬, 张华, 陈明. Laser-induced fabrication of highly branched CuS nanocrystals with excellent near-infrared absorption properties[J]. 中国物理B, 2017, 26(7): 76102-076102.
[5]	魏敏, 叶擎昊, 阚瑞峰, 陈兵, 杨晨光, 许振宇, 陈祥, 阮俊, 范雪丽, 王薇, 胡迈, 刘建国. Spectroscopy system based on a single quantum cascade laser for simultaneous detection of CO and CO₂[J]. 中国物理B, 2016, 25(9): 94210-094210.
[6]	张红, 温述龙, 潘敏, 黄整, 赵勇, 刘翔, 谌继明. Stability of concentration-related self-interstitial atoms in fusion material tungsten[J]. 中国物理B, 2016, 25(5): 56102-056102.
[7]	谢辉, 赵有文, 刘彤, 董志远, 杨俊, 刘京明. C–H complex defects and their influence in ZnO single crystal[J]. 中国物理B, 2015, 24(10): 107704-107704.
[8]	孙家宝, 唐晓雨, 杨周伟, 施毅, 赵毅. Retarded thermal oxidation of strained Si substrate[J]. 中国物理B, 2014, 23(6): 66103-066103.
[9]	邓金祥, 陈亮, 满超, 孔乐, 崔敏, 高学飞. Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption[J]. 中国物理B, 2014, 23(4): 47104-047104.
[10]	贾爱爱, 黄接辉, 冯伟, 张天才, 朱诗尧. The duality of a single particle with an n-dimensional internal degree of freedom[J]. 中国物理B, 2014, 23(3): 30307-030307.
[11]	Alexander Galashev. Computer study of the water–ammonia clusters formation and their dielectric properties[J]. 中国物理B, 2013, 22(7): 73601-073601.
[12]	何培松, 尤文龙, 田光善. Two-dimensional quantum compass model in a staggered field: some rigorous results[J]. 中国物理B, 2011, 20(1): 17503-017503.
[13]	杨杭生, 张健英, 聂安民, 张孝彬. In situ infrared spectroscopic study of cubicboron nitride thin film delamination[J]. 中国物理B, 2008, 17(9): 3453-3458.