中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77505-077505.doi: 10.1088/1674-1056/22/7/077505

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Tunable characteristics of bending resonance frequency in magnetoelectric laminated composites

陈蕾, 李平, 文玉梅, 朱永   

  1. Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
  • 收稿日期:2012-10-10 修回日期:2012-12-27 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50830202 and 61071042) and the National High Technology Research and Development Program of China (Grant No. 2012AA040602).

Tunable characteristics of bending resonance frequency in magnetoelectric laminated composites

Chen Lei (陈蕾), Li Ping (李平), Wen Yu-Mei (文玉梅), Zhu Yong (朱永)   

  1. Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
  • Received:2012-10-10 Revised:2012-12-27 Online:2013-06-01 Published:2013-06-01
  • Contact: Li Ping E-mail:liping@cqu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50830202 and 61071042) and the National High Technology Research and Development Program of China (Grant No. 2012AA040602).

摘要: As magnetoelectric (ME) effect in the piezoelectric/magnetostrictive laminated composites is mediated by mechanical deformation, the ME effect is significantly enhanced in the vicinity of resonance frequency. The bending resonance frequency (fr) of bilayered Terfenol-D/PZT (MP) laminated composites is studied, and our analysis predicts that (i) the bending resonance frequency of MP laminated composite can be tuned by an applied dc magnetic bias (Hdc) due to Δ E effect; (ii) the bending resonance frequency of the MP laminated composite can be controlled by incorporating FeCuNbSiB layers with different thicknesses. The experimental results show that with Hdc increasing from 0 Oe (1 Oe=79.5775 A/m) to 700 Oe, the bending resonance frequency can be shifted in a range of 32.68 kHz ≤qslant fr ≤qslant 33.96 kHz. In addition, with the thickness of FeCuNbSiB layer increasing from 0 μm to 90 μm, the bending resonance frequency of the MP laminated composite gradually increases from 33.66 kHz to 39.18 kHz. This study offers the means by adjusting the strength of dc magnetic bias or the thicknesses of FeCuNbSiB layer to tune the bending resonance frequency for ME composite, which plays a guiding role in the ME composites design for real applications.

关键词: magnetoelectric effect, bending resonance frequency, composite materials

Abstract: As magnetoelectric (ME) effect in the piezoelectric/magnetostrictive laminated composites is mediated by mechanical deformation, the ME effect is significantly enhanced in the vicinity of resonance frequency. The bending resonance frequency (fr) of bilayered Terfenol-D/PZT (MP) laminated composites is studied, and our analysis predicts that (i) the bending resonance frequency of MP laminated composite can be tuned by an applied dc magnetic bias (Hdc) due to Δ E effect; (ii) the bending resonance frequency of the MP laminated composite can be controlled by incorporating FeCuNbSiB layers with different thicknesses. The experimental results show that with Hdc increasing from 0 Oe (1 Oe=79.5775 A/m) to 700 Oe, the bending resonance frequency can be shifted in a range of 32.68 kHz ≤qslant fr ≤qslant 33.96 kHz. In addition, with the thickness of FeCuNbSiB layer increasing from 0 μm to 90 μm, the bending resonance frequency of the MP laminated composite gradually increases from 33.66 kHz to 39.18 kHz. This study offers the means by adjusting the strength of dc magnetic bias or the thicknesses of FeCuNbSiB layer to tune the bending resonance frequency for ME composite, which plays a guiding role in the ME composites design for real applications.

Key words: magnetoelectric effect, bending resonance frequency, composite materials

中图分类号:  (Magnetoelectric effects, multiferroics)

  • 75.85.+t
75.80.+q (Magnetomechanical effects, magnetostriction) 85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 77.84.Lf (Composite materials)