[1] |
Pecora L M and Carroll T L 1990 Phys. Rev. Lett. 64 821
|
[2] |
Pecora L M and Carroll T L 1991 IEEE Trans. Circ. Sys. 38 453
|
[3] |
Dedieu H, Kennedy M P and Hasler M 1993 IEEE Trans. Circ. Syst. Ⅱ 40 634
|
[4] |
Corron N J and Hahs D W 1997 IEEE Trans. Circ. Syst. I 44 373
|
[5] |
Rosselló J L, Canals V, Paul I D and Bota S A 2008 IEICE Electronics Express 5 1042
|
[6] |
Yang T 2004 Int. J. Comp. Cognit. 2 81
|
[7] |
Puebla H and Alvarez-Ramirez J 2001 Phys. Lett. A 283 96
|
[8] |
García-López J H, Jaimes-Reategui R, Chiu-Zarate R, Lopez-Mancilla D, RamirezJimenez R and Pisarchik A N 2008 The Open Electrical and Electronic Engineering Journal 2 41
|
[9] |
Liu H J, Ren B and Feng J C 2012 Chin. Phys. B 21 040501
|
[10] |
Juncu V D, Rafiei-naeini M and Dudek P 2006 Analog Int. Circ. Syst. 46 275
|
[11] |
Dudek P and Juncu V D 2003 Electron. Lett. 39 1431
|
[12] |
Gopal S and Lai C Y 2009 Circ. Syst. Signal Process. 28 535
|
[13] |
Feki M, Robert B, Gelle G and Colas M 2003 Chaos, Solitons and Fractals 18 881
|
[14] |
Kharel R, Busawon K and Ghassemlooy Z 2010 American Control Conference, June 30–July 2, 2010, Baltimore, MD, p. 1791
|
[15] |
Stavrinides S G, Anagnostopoulos A N, Miliou A N, Valaristos A, Magafas L, Kosmatopoulos K and Papaioannou S 2009 J. Eng. Sci. Rev. 2 82
|
[16] |
Zhang Y and Wang X Y 2012 Chin. Phys. B 21 020507
|
[17] |
Gregori S and Cabrini A 2005 48th Midwest Symposium on Circuits and Systems, August 7–10, 2005, Covington, KY, p. 1498
|
[18] |
Govindarajulu S and Prasad T J 2010 Int. J. Eng. Sci. Tech. 2 2248
|
[19] |
Zhou J C and Song H J 2013 Chin. Phys. Lett. 30 020201
|
[20] |
Vadasz L and Grove A S 1966 IEEE Trans. Electron. Dev. 13 863
|
[21] |
Hasanuzzaman M, Islam S K and Tolbert L M 2004 Solid-State Electron. 48 125
|
[22] |
Ku J C and Ismail Y 2007 Circuits and Systems, 2007, ISCAS 2007, IEEE International Symposium on May 27–30, 2007, New Orleans, LA, p. 3736
|
[23] |
Kanda K, Nose K, Kawaguchi H and Sakurai T 2001 IEEE J. Solid-State Circ. 36 1559
|
[24] |
Vadasz L and Grove A S 1966 IEEE Trans. Electron. Dev. 13 863
|
[25] |
Osman A A and Osman M A 1998 Fourth International High Temperature Electronics Conference, June 14–18, 1998, Albuquerque, NM, p. 301
|
[26] |
Chen Y H, Imai K, Jeng M C, Liu Z H, Chen K and Hu C M 1997 Semicond. Sci. Tech. 12 1349
|
[27] |
Jacob Baker R 2010 CMOS Circuit Design, Layout, and Simulation, 3rd edn. (New York: Wiley-IEEE Press) p. 143
|
[28] |
Cheung T, Butson M J and Yu P K N 2004 Phys. Med. Biol. 49 191
|
[29] |
Tsividis Y P 1987 Operation and Modeling of the MOS Transistor, 2nd edn. (New York: McGraw-Hill) p. 189
|
[30] |
Sakuna N, Muanghlua R, Niemcharoen S and Ruangphanit A 2013 Kmitl. Sci. Tech. J. 13 9
|
[31] |
Horio Y, Aihara K and Yamamoto O 2003 IEEE Trans. Neural Netw. 14 1393
|
[32] |
Filanovsky I M and Allam A 2001 IEEE Trans. Circ. Syst. I: Fundam. Theory Appl. 48 876
|