中国物理B ›› 2013, Vol. 22 ›› Issue (12): 120506-120506.doi: 10.1088/1674-1056/22/12/120506

• GENERAL • 上一篇    下一篇

Stability of operation versus temperature of a three-phase clock-driven chaotic circuit

周继超a, Hyunsik Sona, Namtae Kimb, Han Jung Songa c   

  1. a Department of Nano Systems Engineering, Inje University, Gimhae 621-749, Korea;
    b Department of Electronic Engineering, Inje University, Gimhae 621-749, Korea;
    c Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
  • 收稿日期:2013-08-03 修回日期:2013-09-17 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2011-0011698).

Stability of operation versus temperature of a three-phase clock-driven chaotic circuit

Zhou Ji-Chao (周继超)a, Hyunsik Sona, Namtae Kimb, Han Jung Songa c   

  1. a Department of Nano Systems Engineering, Inje University, Gimhae 621-749, Korea;
    b Department of Electronic Engineering, Inje University, Gimhae 621-749, Korea;
    c Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
  • Received:2013-08-03 Revised:2013-09-17 Online:2013-10-25 Published:2013-10-25
  • Contact: Han Jung Song E-mail:hjsong@inje.ac.kr
  • Supported by:
    Project supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2011-0011698).

摘要: We evaluate the influence of temperature on the behavior of a three-phase clock-driven metal–oxide–semiconductor (MOS) chaotic circuit. The chaotic circuit consists of two nonlinear functions, a level shifter, and three sample and hold blocks. It is necessary to analyze a CMOS-based chaotic circuit with respect to variation in temperature for stability because the circuit is sensitive to the behavior of the circuit design parameters. The temperature dependence of the proposed chaotic circuit is investigated via the simulation program with integrated circuit emphasis (SPICE) using 0.6-μm CMOS process technology with a 5-V power supply and a 20-kHz clock frequency. The simulation results demonstrate the effects of temperature on the chaotic dynamics of the proposed chaotic circuit. The time series, frequency spectra, bifurcation phenomena, and Lyapunov exponent results are provided.

关键词: chaotic circuit, nonlinear functions, temperature effect, bifurcation, Lyapunov exponent

Abstract: We evaluate the influence of temperature on the behavior of a three-phase clock-driven metal–oxide–semiconductor (MOS) chaotic circuit. The chaotic circuit consists of two nonlinear functions, a level shifter, and three sample and hold blocks. It is necessary to analyze a CMOS-based chaotic circuit with respect to variation in temperature for stability because the circuit is sensitive to the behavior of the circuit design parameters. The temperature dependence of the proposed chaotic circuit is investigated via the simulation program with integrated circuit emphasis (SPICE) using 0.6-μm CMOS process technology with a 5-V power supply and a 20-kHz clock frequency. The simulation results demonstrate the effects of temperature on the chaotic dynamics of the proposed chaotic circuit. The time series, frequency spectra, bifurcation phenomena, and Lyapunov exponent results are provided.

Key words: chaotic circuit, nonlinear functions, temperature effect, bifurcation, Lyapunov exponent

中图分类号:  (Control of chaos, applications of chaos)

  • 05.45.Gg
82.40.Bj (Oscillations, chaos, and bifurcations) 85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology) 05.45.-a (Nonlinear dynamics and chaos)