Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 17304-017304.doi: 10.1088/1674-1056/22/1/017304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots

宋鑫, 冯淏, 刘玉敏, 俞重远, 刘建涛   

  1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 收稿日期:2012-06-19 修回日期:2012-07-04 出版日期:2012-12-01 发布日期:2012-12-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201), the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2011RC0402), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0261).

Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots

Song Xin (宋鑫), Feng Hao (冯淏), Liu Yu-Min (刘玉敏), Yu Zhong-Yuan (俞重远), Liu Jian-Tao (刘建涛)   

  1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • Received:2012-06-19 Revised:2012-07-04 Online:2012-12-01 Published:2012-12-01
  • Contact: Liu Yu-Min E-mail:microliuyumin@hotmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201), the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2011RC0402), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0261).

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摘要： The strain and electron energy levels of InAs/GaAs(001) quantum dots (QDs) with a GaNAs strain compensation layer (SCL) are investigated. The results show that both the hydrostatic and biaxial strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs' growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.

关键词: strain compensation layer, quantum dots, energy levels, electronic structure

Abstract: The strain and electron energy levels of InAs/GaAs(001) quantum dots (QDs) with a GaNAs strain compensation layer (SCL) are investigated. The results show that both the hydrostatic and biaxial strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs' growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.

Key words: strain compensation layer, quantum dots, energy levels, electronic structure

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
73.63.Kv (Quantum dots) 72.25.Dc (Spin polarized transport in semiconductors) 85.35.Gv (Single electron devices)