Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 13205-013205.doi: 10.1088/1674-1056/22/1/013205

• ATOMIC AND MOLECULAR PHYSICS • 上一篇    下一篇

Electron flux distributions in photodetachment of HF- near an interface: theoretical imaging method study

Maryam Nawaz Awan, A. Afaq   

  1. Centre of Excellence in Solid State Physics, University of the Punjab Lahore-54590, Pakistan
  • 收稿日期:2012-05-11 修回日期:2012-07-02 出版日期:2012-12-01 发布日期:2012-12-01

Electron flux distributions in photodetachment of HF- near an interface: theoretical imaging method study

Maryam Nawaz Awan, A. Afaq   

  1. Centre of Excellence in Solid State Physics, University of the Punjab Lahore-54590, Pakistan
  • Received:2012-05-11 Revised:2012-07-02 Online:2012-12-01 Published:2012-12-01
  • Contact: A. Afaq E-mail:aafaq.cssp@pu.edu.pk

摘要: The electron flux distributions in the photodetachment of HF- near an interface are studied using a two-center model and the theoretical imaging method. An analytical expression for electron flux distributions is derived, which displays oscillations on an observation plane similar to the recent results published by Wang but in the presence of a static electric field. We also discuss the expressions for soft and hard wall cases in detail. A comparison is made with the previous work. The expression is a more general result, and we can deduce from it the electron flux distributions for the photodetachment of H2- near an interface. Finally, we show that the expression reveals similar results as those in [Chin. Phys. B 19 020306 (2010)] when the wall effect is neglected.

关键词: negative ions, two-center model, electron flux, quantum interference

Abstract: The electron flux distributions in the photodetachment of HF- near an interface are studied using a two-center model and the theoretical imaging method. An analytical expression for electron flux distributions is derived, which displays oscillations on an observation plane similar to the recent results published by Wang but in the presence of a static electric field. We also discuss the expressions for soft and hard wall cases in detail. A comparison is made with the previous work. The expression is a more general result, and we can deduce from it the electron flux distributions for the photodetachment of H2- near an interface. Finally, we show that the expression reveals similar results as those in [Chin. Phys. B 19 020306 (2010)] when the wall effect is neglected.

Key words: negative ions, two-center model, electron flux, quantum interference

中图分类号:  (Photodetachment of atomic negative ions)

  • 32.80.Gc
03.65.Sq (Semiclassical theories and applications)