中国物理B ›› 2012, Vol. 21 ›› Issue (8): 84201-084201.doi: 10.1088/1674-1056/21/8/084201

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

陈德良, 曹益平, 黄振芬, 卢熙, 翟爱平   

  1. Department of Opto-Electronics, Sichuan University, Chengdu 610065, China
  • 收稿日期:2011-12-10 修回日期:2012-01-20 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the National Special Program of China (Grant No. 2009ZX02204-008) and the National Basic Research Program of China (Grant No. 2007AA01Z333).

Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

Chen De-Liang (陈德良), Cao Yi-Ping (曹益平), Huang Zhen-Fen (黄振芬), Lu Xi (卢熙), Zhai Ai-Ping (翟爱平 )   

  1. Department of Opto-Electronics, Sichuan University, Chengdu 610065, China
  • Received:2011-12-10 Revised:2012-01-20 Online:2012-07-01 Published:2012-07-01
  • Contact: Cao Yi-Ping E-mail:ypcao@scu.edu.cn
  • Supported by:
    Project supported by the National Special Program of China (Grant No. 2009ZX02204-008) and the National Basic Research Program of China (Grant No. 2007AA01Z333).

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摘要： In this work, a 90-nm critical dimension (CD) technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating (BARC). By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is very bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.

关键词: lithography, optimization, photoresist thichness, critical dimension, swing curve

Abstract: In this work, a 90-nm critical dimension (CD) technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating (BARC). By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is very bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.

Key words: lithography, optimization, photoresist thichness, critical dimension, swing curve

中图分类号:  (Wave propagation, transmission and absorption)

  • 42.25.Bs
42.25.Kb (Coherence) 42.30.Kq (Fourier optics) 42.70.Gi (Light-sensitive materials)