Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer

doi:10.1088/1674-1056/21/2/027101

中国物理B ›› 2012, Vol. 21 ›› Issue (2): 27101-027101.doi: 10.1088/1674-1056/21/2/027101

胡盛东¹,吴丽娟²,周建林¹,甘平¹,张波²,李肇基²

收稿日期:2011-08-18 修回日期:2011-09-13 出版日期:2012-01-30 发布日期:2012-01-30
通讯作者: 胡盛东,hushengdong@hotmail.com E-mail:hushengdong@hotmail.com

Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n⁺-layer

Hu Sheng-Dong(胡盛东)^a)†, Wu Li-Juan(吴丽娟)^b), Zhou Jian-Lin(周建林)^a), Gan Ping(甘平)^a), Zhang Bo(张波)^b), and Li Zhao-Ji(李肇基)^b)

a. College of Communication Engineering, Chongqing University, Chongqing 400044, China;
b. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2011-08-18 Revised:2011-09-13 Online:2012-01-30 Published:2012-01-30
Contact: Hu Sheng-Dong,hushengdong@hotmail.com E-mail:hushengdong@hotmail.com
Supported by:
Project supported by the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) of China (Grant No. cstcjjA40008).

摘要/Abstract

Abstract: A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n⁺-layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm), the E_I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.

Key words: silicon-on-insulator, vertical breakdown voltage, separation by implantation oxygen, interface charges

中图分类号: (Theories and models of many-electron systems)

71.10.-w

73.20.-r (Electron states at surfaces and interfaces) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.40.Ty (Semiconductor-insulator-semiconductor structures)

胡盛东, 吴丽娟, 周建林, 甘平, 张波, 李肇基. [J]. 中国物理B, 2012, 21(2): 27101-027101.

Hu Sheng-Dong(胡盛东), Wu Li-Juan(吴丽娟), Zhou Jian-Lin(周建林), Gan Ping(甘平), Zhang Bo(张波), and Li Zhao-Ji(李肇基) . Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n⁺-layer[J]. Chin. Phys. B, 2012, 21(2): 27101-027101.

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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n⁺-layer

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