中国物理B ›› 2011, Vol. 20 ›› Issue (4): 46103-046103.doi: 10.1088/1674-1056/20/4/046103
孙毅1, 彭华2, 王春雷2, 李吉超2, 张睿智2, 王洪超2
Peng Hua(彭华)a)† , Wang Chun-Lei(王春雷) a), Li Ji-Chao(李吉超)a), Zhang Rui-Zhi(张睿智)a), Wang Hong-Chao(王洪超) a), and Sun Yi(孙毅)b)
摘要: The full-potential linear augmented plane wave method based on density functional theory is employed to investigate the electronic structure of BaSi2. With the constant relaxation time and rigid band approximation, the electrical conductivity, Seebeck coefficient and figure of merit are calculated by using Boltzmann transport theory, further evaluated as a function of carrier concentration. We find that the Seebeck coefficient is more anisotropic than electrical conductivity. The figure of merit of BaSi2 is predicted to be quite high at room temperature, implying that optimal doping may be an effective way to improve thermoelectric properties.
中图分类号: (Alloys )