中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87301-087301.doi: 10.1088/1674-1056/19/8/087301
杨芳, 金奎娟, 黄延红, 何萌, 吕惠宾, 杨国桢
Yang Fang(杨芳), Jin Kui-Juan(金奎娟), Huang Yan Hong(黄延红), He Meng(何萌), LÜ Hui-Bin(吕惠宾)†, and Yang Guo-Zhen(杨国桢)
摘要: We fabricated La1-xSrxMnO3/Si (LSMO/Si) heterojunctions with different Sr doping concentrations (x = 0.1, 0.2, 0.3) in LSMO and studied the Sr content influence on magnetoresistance (MR) ratio. The heterojunctions show positive MR and high sensitivity of MR ratio in a low applied magnetic field. The MR ratio is dependent on Sr content and the low Sr doping in LSMO causes a large positive MR in LSMO/Si junctions. The MR ratio for 0.1 Sr doping in the LSMO/Si heterostructure is 116% in 100 Oe (1 Oe=79.5775 A/m) at 210 K. The mechanism for the positive MR dependence on the doping density is considered to be the competition between the tunneling rate of electrons in eg1 ↑ to t2g ↓ band and that to eg2 ↑ band at the interface region of LSMO. The experimental results are in agreement with those observed in La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n junction. The results indicate that choosing low doping concentration to improve the low field sensitivity of the heterojunction deveces is a very efficacious method.
中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)