Modeling of 4H–SiC multi-floating-junction Schottky barrier diode

doi:10.1088/1674-1056/19/10/107101

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107101-107101.doi: 10.1088/1674-1056/19/10/107101

Modeling of 4H–SiC multi-floating-junction Schottky barrier diode

蒲红斌, 曹琳, 陈治明, 仁杰, 南雅公

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China

收稿日期:2009-10-28 修回日期:2010-01-19 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China.

Modeling of 4H–SiC multi-floating-junction Schottky barrier diode

Pu Hong-Bin(蒲红斌), Cao Lin(曹琳)^†, Chen Zhi-Ming(陈治明), Ren Jie(仁杰), and Nan Ya-Gong(南雅公)

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China

Received:2009-10-28 Revised:2010-01-19 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China.

摘要/Abstract

摘要： This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H--SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm² and breakdown voltage increases 422 V with an additional floating junction for the given structure.

Abstract: This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H–SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 m$\Omega$·cm² and breakdown voltage increases 422 V with an additional floating junction for the given structure.

Key words: silicon carbide, multi floating junction, Schottky barrier diode

中图分类号: (Impurities in crystals)

61.72.S-

73.21.Ac (Multilayers) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.Kk (Junction diodes)

蒲红斌, 曹琳, 陈治明, 仁杰, 南雅公. Modeling of 4H–SiC multi-floating-junction Schottky barrier diode[J]. 中国物理B, 2010, 19(10): 107101-107101.

Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), Chen Zhi-Ming(陈治明), Ren Jie(仁杰), and Nan Ya-Gong(南雅公). Modeling of 4H–SiC multi-floating-junction Schottky barrier diode[J]. Chin. Phys. B, 2010, 19(10): 107101-107101.

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Modeling of 4H–SiC multi-floating-junction Schottky barrier diode

Modeling of 4H–SiC multi-floating-junction Schottky barrier diode

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