Ab initio investigation of boron nanodevices: conductances of the different geometric conformations

doi:10.1088/1674-1056/19/1/017201

摘要/Abstract

摘要： Conductances of different geometric conformations of boron ribbon devices are calculated by the ab initio method. The I--V characteristics of three devices are rather different due to the difference in structure. The current of the hexagonal boron device is the largest and increases nonlinearly. The current of the hybrid hexagon-triangle boron device displays a large low-bias current and saturates at a value of about 5.2~μ A. The current of the flat triangular boron flake exhibits a voltage gap at low bias and rises sharply with increasing voltage. The flat triangular boron device can be either conducting or insulating, depending on the field.

Abstract: Conductances of different geometric conformations of boron ribbon devices are calculated by the ab initio method. The I--V characteristics of three devices are rather different due to the difference in structure. The current of the hexagonal boron device is the largest and increases nonlinearly. The current of the hybrid hexagon-triangle boron device displays a large low-bias current and saturates at a value of about 5.2 μA. The current of the flat triangular boron flake exhibits a voltage gap at low bias and rises sharply with increasing voltage. The flat triangular boron device can be either conducting or insulating, depending on the field.

Key words: boron, conductance, different geometry conformation

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

61.46.Fg (Nanotubes) 71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)) 85.35.Kt (Nanotube devices)

李桂琴. Ab initio investigation of boron nanodevices: conductances of the different geometric conformations[J]. 中国物理B, 2010, 19(1): 17201-017201.

Li Gui-Qin(李桂琴). Ab initio investigation of boron nanodevices: conductances of the different geometric conformations[J]. Chin. Phys. B, 2010, 19(1): 17201-017201.

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