中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2180-2183.doi: 10.1088/1674-1056/17/6/040

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Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si(111) substrates

秦丽霞, 薛成山, 庄惠照, 杨兆柱, 陈金华, 李红   

  1. Institute of Semiconductors, Shandong Normal University, Jinan 250014, China
  • 收稿日期:2007-08-28 修回日期:2007-11-28 出版日期:2008-06-20 发布日期:2008-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 90201025 and 90301002).

Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si(111) substrates

Qin Li-Xia(秦丽霞), Xue Cheng-Shan(薛成山)†, Zhuang Hui-Zhao(庄惠照), Yang Zhao-Zhu(杨兆柱), Chen Jin-Hua(陈金华), and Li Hong(李红)   

  1. Institute of Semiconductors, Shandong Normal University, Jinan 250014, China
  • Received:2007-08-28 Revised:2007-11-28 Online:2008-06-20 Published:2008-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 90201025 and 90301002).

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摘要： A mass of GaN nanowires has been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950\du. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.

关键词: nanowires, crystal growth, scanning and transmission electron microscopy

Abstract: A mass of GaN nanowires has been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.

Key words: nanowires, crystal growth, scanning and transmission electron microscopy

中图分类号:  (Methods of micro- and nanofabrication and processing)

  • 81.16.-c
61.05.cp (X-ray diffraction) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.37.Lp (Transmission electron microscopy (TEM)) 78.30.Fs (III-V and II-VI semiconductors) 81.15.Cd (Deposition by sputtering)