中国物理B ›› 2000, Vol. 9 ›› Issue (1): 31-36.doi: 10.1088/1009-1963/9/1/007

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ANALYSES FOR LASING THRESHOLD AT 2 AND 1.5μm WAVELENGTHS IN Tm:YVO4 CRYSTAL

洪治1, 黄莉蕾2   

  1. (1)Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China; (2)Optoelectronic Division, China Institute of Metrology, Hangzhou 310034, China
  • 收稿日期:1999-03-19 修回日期:1999-05-10 出版日期:2000-01-15 发布日期:2005-06-10
  • 基金资助:
    Project supported by the Foundation of State Key Laboratory of Zhejiang University of China (Grant No. LM01-9813).

ANALYSES FOR LASING THRESHOLD AT 2 AND 1.5μm WAVELENGTHS IN Tm:YVO4 CRYSTAL

Huang Li-lei (黄莉蕾)a, Hong Zhi (洪治)b   

  1. a Optoelectronic Division, China Institute of Metrology, Hangzhou 310034, China; b Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China
  • Received:1999-03-19 Revised:1999-05-10 Online:2000-01-15 Published:2005-06-10
  • Supported by:
    Project supported by the Foundation of State Key Laboratory of Zhejiang University of China (Grant No. LM01-9813).

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摘要： From transition-rate-equations and transmission-equations the formulas of threshold power are deduced for an end-pumped laser, in which the probability of cross-relaxation cannot be ignored and the nonradiative transition-probability of the excited state is the same order as the radiative transition-probability of upper level of the lasing transition. The lasing performance of Tm:YVO4 at λ=1.9 and 1.5μm is discussed by dint of these equations of threshold power.

Abstract: From transition-rate-equations and transmission-equations the formulas of threshold power are deduced for an end-pumped laser, in which the probability of cross-relaxation cannot be ignored and the nonradiative transition-probability of the excited state is the same order as the radiative transition-probability of upper level of the lasing transition. The lasing performance of Tm:YVO4 at $\lambda$=1.9 and 1.5μm is discussed by dint of these equations of threshold power.

中图分类号:  (Oscillator strengths, lifetimes, transition moments)

  • 32.70.Cs
42.55.Rz (Doped-insulator lasers and other solid state lasers) 42.60.By (Design of specific laser systems)