中国物理B ›› 2007, Vol. 16 ›› Issue (9): 2809-2813.doi: 10.1088/1009-1963/16/9/052
刘东平1, 刘艳红2, 张家良2, 马腾才2, 李建2
Liu Yan-Hong(刘艳红)a)†, Zhang Jia-Liang(张家良)a), Ma Teng-Cai(马腾才)a), Li Jian(李建)a), and Liu Dong-Ping(刘东平)b)
摘要: The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law for ions in mixed gases, and the two-temperature model for ions at higher reduced field are used to determine the ion mobility. The kinetic energies of ions in CH$_{4}$\,+\,Ar(He) dielectric barrier discharge plasma at a fixed total gas pressure and various Ar (He) concentrations are calculated. It is found that with increasing Ar (He) concentration in CH$_{4}$\,+\,Ar (He) from 20{\%} to 83{\%}, the CH$_{4}^{ + }$ kinetic energy increases from 69.6 (43.9) to 92.1 (128.5)\,eV, while the Ar$^{ + }$ (He$^{ + })$ kinetic energy decreases from 97 (145.2) to 78.8 (75.5)\,eV. The increase of CH$_{4}^{ + }$ kinetic energy is responsible for the increase of hardness of diamond-like carbon films deposited by CH$_{4}$\,+\,Ar (He) dielectric barrier discharge without bias voltage over substrates.
中图分类号: (Methods of deposition of films and coatings; film growth and epitaxy)