中国物理B ›› 2005, Vol. 14 ›› Issue (1): 163-168.doi: 10.1088/1009-1963/14/1/030

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Two-dimensional temperature distribution inside a hemispherical bowl-shaped target for plasma source ion implantation

王艳辉1, 王德真1, 刘成森2   

  1. (1)State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Department of Physics, Dalian University of Technology, Dalian,116023, China; (2)State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Department of Physics, Dalian University of Technology, Dalian,116023, China;Department of Physics, Liaoning Normal University, Dalian,116029, China
  • 收稿日期:2004-04-01 修回日期:2004-08-14 出版日期:2005-01-20 发布日期:2005-01-20
  • 基金资助:
    Project supported by National Natural Science Foundation of China (Grant No 10275010)

Two-dimensional temperature distribution inside a hemispherical bowl-shaped target for plasma source ion implantation

Liu Cheng-Sen (刘成森)ab, Wang Yan-Hui (王艳辉)a, Wang De-Zhen (王德真)a   

  1. a State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116023, China; b Department of Physics, Liaoning Normal University, Dalian 116029, China
  • Received:2004-04-01 Revised:2004-08-14 Online:2005-01-20 Published:2005-01-20
  • Supported by:
    Project supported by National Natural Science Foundation of China (Grant No 10275010)

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摘要： One important parameter for the plasma source ion implantation (PSII) process is the target temperature obtained during the surface modification. Because the power input to the target being implanted can be large, its temperature is quite high. The target temperature prediction is useful, whether the high temperature is required in the experiment. In addition, there is likely to be temperature variation across the target surface, which can lead to locally different surface properties. In this paper, we have presented a model to predict and explain the temperature distribution on a hemispherical bowl-shaped vessel during plasma source ion implantation. A two-dimensional fluid model to derive both the ion flux to the target and the energy imparted to the substrate by the ions in the plasma sheath simulation is employed. The calculated energy input and radiative heat loss are used to predict the temperature rise and variation inside the sample in the thermal model. The shape factor of the target for radiation is taken into account in the radiative energy loss. The influence of the pulse duration and the pulsing frequency on the temperature distribution is investigated in detail. Our work shows that at high pulsing frequencies the temperature of the bowl will no longer rise with the increase of the pulsing frequency.

关键词: hemispherical bowl-shaped vessel, plasma source ion implantation, ion heating

Abstract: One important parameter for the plasma source ion implantation (PSII) process is the target temperature obtained during the surface modification. Because the power input to the target being implanted can be large, its temperature is quite high. The target temperature prediction is useful, whether the high temperature is required in the experiment. In addition, there is likely to be temperature variation across the target surface, which can lead to locally different surface properties. In this paper, we have presented a model to predict and explain the temperature distribution on a hemispherical bowl-shaped vessel during plasma source ion implantation. A two-dimensional fluid model to derive both the ion flux to the target and the energy imparted to the substrate by the ions in the plasma sheath simulation is employed. The calculated energy input and radiative heat loss are used to predict the temperature rise and variation inside the sample in the thermal model. The shape factor of the target for radiation is taken into account in the radiative energy loss. The influence of the pulse duration and the pulsing frequency on the temperature distribution is investigated in detail. Our work shows that at high pulsing frequencies the temperature of the bowl will no longer rise with the increase of the pulsing frequency.

Key words: hemispherical bowl-shaped vessel, plasma source ion implantation, ion heating

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